A high speed, LSI, n-channel Si-Gate technology has been developed and characterized for the manufacture of integrated circuits. Utilizing the advantages of local oxidation and ion implantation, a technology is achieved which is: (a) fabricated on high resistivity Si substrates; (b) quasi-planar in topological structure; (c) completely adjustable in gate threshold voltage (enhancement and depletion modes) and field threshold voltage; and (d) highly reproducible in electrical parameter control. Additionally, by employing a thin gate insulator structure (sio2, 75d) a factor of increase in gain is realized with respect to standard p-channel MOSFETs. 4,096 bit dynamic RAM circuits have been designed and fabricated in this technology. Typical access times of $50 nanoseconds with high circuit yields are realized.

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