Coupled three-dimensional (3D) process and device simulations have been applied to study the performance of FinFETs to handle the new FinFET-specific design and process challenges. By using an appropriate 3D technology CAD (TCAD) simulation methodology, it is demonstrated that the novel strained-SiGe channel FinFETs may achieve more than 50% performance enhancement compared to Si-channel FinFETs.

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Coupled process and device simulations have been applied to study the microwave noise performance of high frequency Silicon-Germanium heterojunction bipolar transistors. The detrimental effects of noise in advanced strain-engineered bipolar devices with highly scaled device dimensions are discussed in detail. Y-parameter based technique has been used to extract the noise parameters of bipolar transistors to account for the correlation between the base and collector shot noise.

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