Abstract-The effect of doping on the optical transmittance of germanium single crystals is studied by infrared Fourier spectroscopy. It is established that the introduction of silicon and tellurium additives into germanium doped with antimony provides a means for improving the temperature stability of the optical properties of the crystals.
Both Sb-doped Germanium and Ge-Si solid solution single crystals with resistivity from 1.5 to 7 Ω·cm were grown using the Czochralski method. The optical transmission of single crystals and the stability of their optical properties were studied by infrared Fourier spectroscopy at a wavelength of 10.6 μm and temperature range from 25 to 60 °C. It was found that decreasing the background impurities concentration leads to the reduction of the infrared absorption at room temperature while not affecting the thermal stability of the optical properties. Thermal stability of the optical properties of Sb-doped germanium single crystals increases by adding from 0.2 to 0.8 at % of silicon.
The annealing effect in the temperature range from 350 to 450 ∘ C on the behavior of interstitial oxygen O dissolved in germanium and on optical properties of single crystals has been investigated by Fourier transformed infrared spectrometry. It was found that oxygen band maximum of 843 cm −1 shifted toward the 856 cm
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