The diffusion behavior of ion-implanted arsenic and phosphorus in relaxed Si0.8Ge0.2 has been investigated. Under equilibrium, extrinsic conditions, both dopants are observed to diffuse faster in SiGe than in Si. Simulations of the measured profiles suggest that the ratio of the effective diffusivity in Si0.8Ge0.2 compared to that in Si is roughly seven for arsenic, and roughly two for phosphorus. Under transient diffusion conditions, the arsenic diffusivity in SiGe is retarded, and the magnitude of the diffusion is roughly the same as that in Si. This result suggests that it is possible to optimize the diffusion conditions to achieve n+ source/drain junctions that are as shallow in SiGe as in Si.

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SYNOPSISThe effects of various curing accelerators on the physical properties of epoxy molding compounds (EMCs) were investigated. Such properties as elasticities in rubbery and glassy regions, glass transition temperature, thermal expansion coefficient, and water absorption at 60°C of neat epoxy resins using various curing accelerators were found to be directly reflected in the properties of the EMCs that were prepared by using each resin system. However, volume resistivity and saturated water absorption at 120°C were not reflected. This was attributed to differences in the catalytic reactivity of accelerators causing different melt viscosity for the EMC, which resulted in different densities (packing degrees) and affected physical properties of molded EMC. On the other hand, it was found that the density of molded EMC was also affected by the molding conditions. To improve the physical properties of the molded EMC, in addition to proper selection of accelerators, it was very important to set the melt viscosity of the EMC as high as possible within the moldable range and to select suitable molding conditions.

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