CP2K is an open source electronic structure and molecular dynamics software package to perform atomistic simulations of solid-state, liquid, molecular, and biological systems. It is especially aimed at massively parallel and linear-scaling electronic structure methods and state-of-the-art ab initio molecular dynamics simulations. Excellent performance for electronic structure calculations is achieved using novel algorithms implemented for modern high-performance computing systems. This review revisits the main capabilities of CP2K to perform efficient and accurate electronic structure simulations. The emphasis is put on density functional theory and multiple post–Hartree–Fock methods using the Gaussian and plane wave approach and its augmented all-electron extension.
We demonstrate by specific examples that if a Kohn-Sham exchange-correlation potential is given explicitly in terms of the electron density and its derivatives, then one can easily reconstruct the parent density functional by evaluating analytically (or numerically with one-dimensional quadratures) the van Leeuwen-Baerends line integral (Phys. Rev. A 1995, 51, 170-178) along a path of (coordinate)-scaled densities. The choice of a density scaling path amounts to defining the gauge of the resultant exchange-correlation energy density. The well-known Levy-Perdew virial relation for exchange potentials can be viewed as an analytical line integral along the electron-number-conserving uniform density scaling path. Energies obtained from model exchange-correlation potentials should be interpreted with caution because the reconstructed density functional is unique (up to a gauge transformation) only if the model Kohn-Sham potential is a functional derivative.
We report a combined non-local (PBE-TC-LRC) Density Functional Theory (DFT) and linear-response time-dependent DFT (LR-TDDFT) study of the structural, electronic, and optical properties of the cation-vacancy based defects in aluminosilicate (AlSi) imogolite nanotubes (Imo-NTs) that have been recently proposed on the basis of Nuclear Magnetic Resonance (NMR) experiments. Following numerical determination of the smallest AlSi Imo-NT model capable of accommodating the defect-induced relaxation with negligible finite-size errors, we analyse the defect-induced structural deformations in the NTs and ensuing changes in the NTs' electronic structure. The NMR-derived defects are found to introduce both shallow and deep occupied states in the pristine NTs' band gap (BG). These BG states are found to be highly localized at the defect site. No empty defect-state is modeled for any of the considered systems. LR-TDDFT simulation of the defects reveal increased low-energy optical absorbance for all but one defects, with the appearance of optically active excitations at energies lower than for the defect-free NT. These results enable interpretation of the low-energy tail in the experimental UV-vis spectra for AlSi NTs as being due to the defects. Finally, the PBE-TC-LRC-approximated exciton binding energy for the defects' optical transitions is found to be substantially lower (up to 0.8 eV) than for the pristine defect-free NT's excitations (1.1 eV).
Time-dependent density functional theory has become state-of-the-art for describing photophysical and photochemical processes in extended materials due to its aordable cost. The inclusion of exact exchange was shown to be essential for the correct description of the long-range asymptotics of electronic interactions and thus a well-balanced description of valence, Rydberg and charge-transfer excitations. Several approaches for an ecient treatment of exact exchange have been established for the ground state, while implementations for excited-state properties are rare. Furthermore, the high computational costs required for excited-state properties in comparison to ground-state computations often hinder large-scale applications on periodic systems with hybrid functional accuracy. We therefore propose two approximate schemes for improving computational eciency for the treatment of exact exchange. Within the auxiliary density matrix method (ADMM), exact exchange is estimated using a relatively small auxiliary basis and the introduced basis-set incompleteness error is compensated by an exchange density functional correction term. Benchmark results for a test set of 35 molecules demonstrate that the mean absolute error introduced by ADMM is smaller than 0.30.2 pm for excited-state bond lengths and in the range of 0.02 -0.070.06 eV for vertical excitation, adiabatic excitation and uorescence energies. Computational timings for
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