No abstract

No abstract

The structure of a 50-nm-thick TiO2 film grown on MgO(001) substrate maintained at 630 °C was studied by x-ray diffraction. Each film was fabricated by varying both the deposition rate of Ti atoms, which are produced by Ar-ion beam sputtering onto a Ti target, and the partial pressure of O2 gas (PO2). When Ti atoms are supplied at a rate of 0.1 nm min−1(4.0×1014 cm−2 min−1) at PO2=1.1×10−2 Pa, the TiO2 film exhibited the anatase structure whose (200) plane was parallel to the MgO(001). The TiO2 film with the rutile structure whose (110) plane was parallel to the MgO(001) was grown at the same deposition rate and PO2=3.1×10−3 Pa. Evidence demonstrating that the structure of TiO2 film is controlled only when Ti atoms and O2 molecules are supplied simultaneously is presented.

No abstract

It is necessary to control the internal stress of optical thin films in order to address problems such as peeling and cracking. Internal stress differs among films prepared by different deposition methods. We investigated the internal stress of films prepared by sputtering, electron beam (EB) evaporation, and a combination deposition method that we developed. The internal stress was successfully controlled, showing a value between that of EB evaporation and sputtering.