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Photomasks are currently inspected based on the standard of defect size. A shortcoming of this standard is that the type of defects which do not impact on a wafer, could be detected as impermissible defects. All of them are subject to repair works and some of them require further inspection by AIMS. This is one of the factors that are pushing down the yield and the turnaround time (TAT) of mask manufacturing.An effective way to improve this situation will be to do the repair works selectively on the defects that are predicted to inflict a functional damage on a wafer.In this report, we will propose a defect evaluation system named ADRES (Advanced Photomask Defect Repair Evaluation System), featuring a function to extract edges from a mask SEM image to be passed on to a litho-simulation. A distinctive point of our system is the use of a mask SEM image with a high resolution.