The enhanced optical Kerr effect in a GaAs/AlAs multilayer cavity has been studied by numerical simulation using the self-consistent transfer matrix method. The simulated Kerr signal intensity of the cavity mode ( $ 1504 nm) markedly increases with increasing multilayer period because of the high quality factor (Q) of the multilayer cavity. The simulation results reveal that Kerr signal intensity increases in proportion to Q 4 , which is well explained by the enhanced nonlinear phase shift owing to (1) the large refractive index change induced by the strong internal optical field of the pump light and (2) the long photon lifetime of the probe light in the multilayer cavity.
A strong enhancement of two-photon absorption (TPA) has been demonstrated in a 30-period GaAs/AlAs multilayer with a GaAs halfwavelength (/2) cavity layer. In order to measure the time-resolved TPA signals, we successfully developed a selective etching process using an etch-stopper structure consisting of 5-nm-thick AlAs and 200-nm-thick Al 0:3 Ga 0:7 As double layers for removing the GaAs substrate. An analysis of the observed TPA results reveals that the average light intensity of the multilayer cavity is 41 times larger than that of a GaAs bulk sample. The obtained enhancement factor is in good agreement with the simulated value (45 times larger), which is determined from the simulated light intensity distribution by the conventional transfer matrix method.
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