We have developed full colour top emitting quantum dot light‐emitting diode (QD‐LED) display driven by a 176‐ppi active matrix of metal oxide thin‐film transistors. Red, green and blue (RGB) QD‐LED subpixel emission layers are patterned by our original UV photolithography process and materials. We also demonstrate the potential to achieve high resolution such as 528 ppi using this process.

Cu-doping effects and a CdSxTe1−x mixed crystal layer in CdS/CdTe solar cells were investigated on the basis of the photoluminescence (PL) of the CdS/CdTe junction using excitation lights incident on the glass substrate side (junction PL) with various excitation wavelengths. In the Cu-doped CdS/CdTe solar cells, broad emissions at 910–950 nm, which were probably caused by donor–acceptor pair (DAP) emission between CuCd acceptors and ClTe donors, were observed. The intensity of the junction PL markedly increased owing to the Cu doping. This result suggests that the intensity of junction PL is relevant to the conversion efficiency of CdTe solar cells. Furthermore, the PL peak energy increased with increasing excitation wavelength. This result indicates that the CdSxTe1−x mixed crystal layer is formed in the CdS/CdTe interface, and that the S composition decreased from the CdS/CdTe interface to the rear.

We report and discuss the challenges to realize a nanoLED based display from the perspective of materials and processes. Additionally, we report on an active‐matrix nanoLED display using heavy metal free Quantum Dots (QDs) patterned by photolithography, realized by combining materials and process technology.

Degradation phenomena under high-voltage stress, referred to as potential-induced degradation (PID) in general, were studied in superstrate-type thin-film photovoltaic (PV) modules, such as CdTe and thin-film Si PV modules. Both deterioration in the PV performance and delamination of the transparent conducting oxide (TCO) layer on the glass substrate were observed by the PID test for both PV modules, although a change in the PV parameters during the PID test with negative voltage application was somewhat different between them. It was also found for both PV modules that recovery from PID is accomplished by positive voltage application and that quick and drastic deterioration in all the PV parameters occurs by the second negative voltage application after recovery. It is suggested that the common origin of PID for superstrate-type thin-film PV modules is damage and delamination of the TCO layer.

This paper reports on the potential of quantum dot light emitting diode (QD-LED) as a future display technology and the challenges to realize a QD-LED based display from the perspective of materials, processes, and optical design requirements. We give an update on development of active matrix QD-LED displays using Cd free QDs.