We report a high performance electroluminescence device based on bi-layer conjugated polymer structures consisting of a hole transporting (amine-fluorene) and an emissive (benzothiadiazole-fluorene) polymer layers prepared by the spin-coating technique on the glass substrate. Devices showed green emission with an electroluminescence peak located at around 545 nm and a full width at half maximum of about 80 nm. Our devices have also shown a high brightness (∼10 000 cd/m2 at 0.84 mA/mm2), good emission efficiency (∼14.5 cd/A) and luminous efficiency (2.26 lm/W), a large external quantum efficiency (3.8%), and a reasonable forward-to-reverse bias current rectification ratio (>103 at ±25 V).
ZnO thin films were deposited by atomic layer deposition (ALD) at various temperatures and the resulting electrical and chemical properties were examined. The fraction of O-H bonds in ZnO films decreased from 0.39 to 0.24 with increasing processing temperatures. The O/Zn ratio decreased from 0.90 at 70 • C to 0.78 at 130 • C. The carrier concentration and resistivity changed sharply with decreasing temperature. The ZnO thin film transistors (TFTs) were fabricated at processing temperatures of 70 to 130 • C and the electrical properties of the TFT were as follows: the field-effect mobility ranged from 8.82 × 10 −3 to 6.11 × 10 −3 cm 2 V −1 s −1 , the on/off current ratio ranged from 1.28 × 10 6 to 2.43 × 10 6 , the threshold voltage ranged from −12.5 to 14.7 V and the subthreshold swing ranged from 1.21 to 24.1 V/decade. The electrical characteristics of the ZnO TFT were enhanced as the processing temperature decreased.
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