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In this work, we investigated the use of a homogeneous Al-doped zinc oxide (AZO) buffer layer to improve the performance of an organic light-emitting diode (OLED) device fabricated on an AZO anode. For this, 10-nm-thick AZO buffer layers with Al doping concentrations of 3.1, 4.1, and 5.1 at % were grown on 140-nm-thick AZO anode films containing 2.1 at % Al by atomic layer deposition. The electrical resistivity of the AZO anode with a homogeneous AZO buffer layer decreased with an increase in Al doping concentration up to 4.1 at %; however, the resistivity increased at higher doping concentrations in the AZO buffer layer. On the other hand, the work functions of the AZO anode with the AZO buffer layer containing various Al doping concentrations gradually increased with an increase in Al doping concentration from 3.1 to 5.1 at %. Therefore, the best film properties were obtained for an AZO anode with an AZO buffer layer containing 4.1 at % Al, and the work function value for this film was 4.64 eV. The highest luminance and current efficiency values were optimized to be 20290 cd/m(2) and 13.4 cd/A, respectively, with the OLED device composed of a DNTPD/TAPC/Bebq2:10% doped RP-411/Bphen/LiF/Al structure on an AZO anode with an AZO buffer layer containing 4.1 at % Al.

A simple synthesis of Ag nanostructures such as nanorods and nanowires has been demonstrated with citrate-capped Pt seeds. UV-visible spectra and photographs of the synthesized solutions at different UV exposure times showed that the citrate-capped Pt seed played a crucial role in the growth of Ag nanostructures. After UV exposure of the colloidal solution for 60 min, the average diameter, length, and aspect ratio of the Ag nanostructures were about 95 nm, 2.1 μm, and 22, respectively. The photochemical reduction is hypothesized to result from photoelectron transfer from adsorbed citrate to Pt nanoparticle seed allowing Ag ions to form Ag nanostructures. Based on X-ray diffraction spectra and transmission electron microscope images, the synthesized Ag nanostructures were a face-centered cubic single crystal with good purity. These results suggest that the photochemical reduction method can provide Ag nanostructures in the presence of citrate-capped Pt seeds at room temperature for anisotropic Ag products.

A zinc-metal dopant-oxygen precursor exposure cycle is demonstrated as a modified deposition procedure for better distribution of Al-dopants in ZnO films by atomic layer deposition with the aim to reduce the formation of nanolaminate thin films that might form with the typically used alternating ZnO and metal oxide deposition procedure. The distribution and chemical bonding states of Al-dopants were studied with various dopant deposition intervals of Zn–Al–O precursor and Zn–O cycles at 1::4, 1::9, 1::14, and 1::19 ratios. The smallest resistivity of Al-doped ZnO film without degradation of transparency was obtained at 250 °C with 5.37×10−4 Ω cm.