O-band InP etched facets lasers were heterogeneously integrated by micro-transfer-printing into a 1.54 µm deep recess created in the 3 µm thick oxide layer of a 220 nm SOI wafer. A 7 × 1.5 µm 2 cross-section, 2 mm long multimode polymer waveguide was aligned to the ridge post-integration by e-beam lithography with <0.7 µm lateral misalignment and incorporated a tapered silicon waveguide. A 170 nm thick metal layer positioned at the bottom of the recess adjusts the vertical alignment of the laser and serves as a thermal via to sink the heat to the Si substrate. This strategy shows a roadmap for active polymer waveguide-based photonic integrated circuits.

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On-chip optical interconnects heterogeneously integrated on silicon wafers by transfer-print technology are presented for the first time. Thin (<5 μm), micron sized light-emitting diodes (LEDs) and photo diodes (PDs) are prefabricated and transfer-printed to silicon wafer with polymer waveguides built between them. Data transmission with total power consumption as low as 1 mW, signal to noise ratio of >250 and current transfer ratio of 0.1% in a compact volume of <0.0004 mm 3 are demonstrated. Experiment shows that the polymer waveguide between the LED and PD plays a key role in enhancing the data transmission efficiency. Reciprocal performance for bidirectional transmission is also achieved. The results show the potential for cost-effective and low profile form-factor on-chip opto-isolators.

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