Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging. Here we report high-performance MoS 2 field-effect transistors on paper fabricated with a "channel array" approach, combining the advantages of two large-area techniques: chemical vapor deposition and inkjet-printing. The first allows the pre-deposition of a pattern of MoS 2 ; the second, the printing of dielectric layers, contacts, and connections to complete transistors and circuits fabrication. Average I ON /I OFF of 8 × 10 3 (up to 5 × 10 4) and mobility of 5.5 cm 2 V −1 s −1 (up to 26 cm 2 V −1 s −1) are obtained. Fully functional integrated circuits of digital and analog building blocks, such as logic gates and current mirrors, are demonstrated, highlighting the potential of this approach for ubiquitous electronics on paper.

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In this work we produce and study silicon nitride (SiN x) thin films deposited by Hot Wire Chemical Vapor Deposition (HW-CVD) to be used as encapsulation barriers for flexible organic photovoltaic cells fabricated on polyethylene terephthalate (PET) substrates in order to increase their shelf lifetime. We report on the results of SiN x double-layers and on the equivalent double-layer stack where an Ar-plasma surface treatment was performed on the first SiN x layer. The Ar-plasma treatment may under certain conditions influences the structure of the interface between the two subsequent layers and thus the barrier properties of the whole system. We focus our attention on the effect of plasma treatment time on the final barrier properties. We assess the encapsulation barrier properties of these layers, using the calcium degradation test where changes in the electrical conductance of encapsulated Ca sensors are monitored with time. The water vapor transmission rate (WVTR) is found to bẽ 3 × 10 −3 g/m 2 •day for stacked SiN x double-layer with 8 min Ar plasma surface treatment.