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Semiconductor Process and Design CenterTexas Instruments, Incorporated Dallas, TexasThis paper describes an 0.8 um,BiCMOS process technology for the next generation of very high performance, low power logic and memory roducts.As an example, this technology is

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We report on fabricated capacitors following B and BF2 implantation with near-identical boron profiles as measured by SIMS. The C-V curves showed flatband shifts between the two implanted species which increase with the implant dose, up to 0.27V for le14 cm-2. Modeling the processing with an interface trap model for boron in the case of BF2 implant but not for B, gave good agreement with both SIMS doping profiles and the C-V curves, and reproduced the C-V shifts. This effect is predicted to have a significant impact on MOS Vth.

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