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A 128 x 128 element CID imager was operated in a simulated stellar tracking environment and ev8luated f8r temporal and pattern noise and spectral response over a temperature range of -40 C to +25 C.The test devices were fabricated on long -lifetime bulk silicon material and utilized very thin upper -level polysilicon electrodes for enhanced spectral response. A standard microcomputer was used to generate all control signals and to collect and process performance data.

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ABSlRACTThe emergence of fine geometry CMOS technology augmented w i t h a n a l o g c a p a b i l i t y p r e s e n t s a powerful tool for the VLSI s y s t e m d e s i g n e r , I n t h i s p a p e r , t h e a u t h o r s w i l l review major miles t o n e s i n t h e e v o l u t i o n of analog/CMOS technology. I n c l u d e d i n t h i s d i s c u s s i o n w i l l be an overview of t h e m u l t i l e v e l m e t a l 1.2 micron analogechnology which incorporates molybdenum r e s i sto'rs and isolated metal-to-metal capacitors. Low power requirements and circuit design simplic i t y of CbiOS t e c h n o l o g y a r e t h e d r i v i n g f o r c e s f o r t h e r a p i d e v o l u t i o n of CMOS systems on a c h i p . R a i l t o r a i l s w i n g s , h i g h g a i n , good n o i s e immunity and e a s i e r c i r c u i t d e s i g n a n d c i r c u i t s i m u l a t i o n w i t h CMOS a r e d e c i s i v e a d v a n t a g e s o v e r o t h e r t e c h n o l o g i e s . A n a l o g s a m p l e d a t a c i r c u i t s a r e t h e p r i m a r y r e a s o n f o r u s i n g CMOS technology s i n c e t h e a v a i l a b i l i t y of matched capacitors, near ideal switches and high performance operat i o n a l a m p l i f i e r s a r e t h e b a s i c e l e m e n t s n e e d e d t o r e a l i z e s w i t c h e d c a p a c i t o r c i r c u i t s o f h i g h complexity on a s m a l l s i l i c o n a r e a , Good examples a r e s w i t c h e d c a p a c i t o r f i l t e r s a n d AID converte r s . I n r e c e n t y e a r s a v a r i e t y of papers on pwell and n-well short channel analog CMOS processes have been published. 111 -141 Scaled Analog CMOS C i r c u i t D e s i g n C o n s t r a i n t s High performance analog CMOS c i r c u i t s c a n be r e a l i z e d u s i n g minimum geometry MOSFETS. For l u m PMOS d e v i c e s , t h e h o t c a r r i e r e f f e c t h a s b e e n shown t o be n e g l i g i b l e up t o a b o u t 20 v o l t s 151. However, a s t h e g a t e l e n g t h of n-channel d e v i c e s approaches lnm t h e h o t c a r r i e r e f f e c t r e d u c e s t h e a l l o w a b l e d r a i n t o s o u r c e v o l t a g e t o a b o u t 5V.Even a t t h i s v o l t a g e , t h e o u t p u t r e s i s t a n c e i s decreased due to the channel length modulation which reduces the voltage gain. Because of the reduced power supply voltage, the dynamic range i s s m a l l e r . I n a d d i t i o n , whenever a n a l o g c i r c u i t s s h a r e a c h i p t h a t was optimized f o r h i g h s p e e d d i g i t a l s i g n a l p r o c e s s i n g t h e r e i s a fundamental constraint on t h e a v a i l a b l e g a i n of MOS a m p l i f i e r s . T h e r e f o r e s u i t a b l e c i r c u i t t e c hn o l o g i e s m u s t b e u s e d t o o b t a i n l a r g e g a i n . One example of c i r c u i t t e c h n o l o g y i s t o u s e s t a c k e d m i r r o r g a i n s t a g e s i n a n o p e r a t i o n a l a m p l i f i e r . I n t h e f u t u r e t h e c i r c u i t d e s i g n e r s w i l l be cha...