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We describe an advanced 0.13pm CMOS technology platform optimized for density, performance, low power and analoghixed signal applications. Up to 8 levels of Copper interconnect with industries first true low-k dielectric (SiLK, k=2.7) [ l ] result in superior interconnect performance at aggressive pitches. A 2.28pm2 SRAM cell is manufactured with high yield by introducing elongated local interconnects on the contact level without increasing process complexity. Trench based embedded DRAM is offered for large area memory. Modular analog devices as well as passive components like resistors, MIM capacitors and intrinsic inductors are integrated. References(1) R. D. Goldblatt et al.: A High Performance 0.13 pm Copper BEOL Technology with Low-k Dielectric, IlTC 2000 (2) L.K. Han et al: A Modular 0.13pm BULK CMOS Technology for High performance and Low Power Applications, VLSI 2000, p. 12 (3) M. Armacost et al: A High Reliability Metal Insulator Metal Capacitor for 0,18 pm Copper Technology, IEDM 2000, p. 157 SiLK is a registixed trademark of The Dow Chemical Company 101 4-891 14-012-7/01 2001 Symposium on VLSI Technology Digest of Technical Papers

Low voltage operation in s u b -0 . 2 5~ requires the simultaneous integration of all components on a single chiphigh performance, low leakage and mixed-signal componentsis crucial. In this paper we present the successful integration of a low leakage gate-dielectric using a triple-gateoxide process with 16&24&52A, a low-k BEOL and mixed signal components. The 1.5V S U M cell

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Laser or elecrricul blow Fuse 3LM -6LM dual damasene copper + MIM cupucirar (ILD= Si02 or FSG) CoSi, gate/diffusion + non-silicided gute/d@usion resistors High-speed + Low Power + 3.3V I/O + Anulog CMOS (low Vt) (high Vt) ( thick gate ox.) Conventional STI None or sroruge cupuchrfor eDRAM or de-coupling cup. non-Epi vs. EpiTABLE I EPI VS. NON EPI FOR DIFFERENT APPLICATIONSA 0.18pm high performance / low power technology platform is described which allows 'system on a chip integration' for a broad spectrum of products. Based on a generic digital process (1) additional modules can be added in a modularand cost effective-manner for mixed signal as well as for eDRAM applications offering a maximum of flexibility for product designers. For mixed signal applications a precision metal-insulator-metal capacitor (MIMCAP) was developed. This is for the first time a realization of a metal-insulatormetal capacitor in a copper dual damascene metallization scheme.