Photoluminescence spectroscopy and energy-level analysis of metal-organic-deposited Ga2O3:Cr3+ films J. Appl. Phys. 112, 063522 (2012) Electrical and optical properties of vanadium dioxide containing gold nanoparticles deposited by pulsed laser deposition Appl. Phys. Lett. 101, 133102 (2012) Controlling spatial distribution of thermal poling induced second-order optical nonlinearity with multilayered structures Appl. Phys. Lett. 101, 101101 (2012) Optical characteristic of sol-gel synthesized lead lanthanum titanate-cobalt iron oxide multiferroic composite thin film J. Appl. Phys. 112, 043520 (2012) Electrical and Fourier transform infrared properties of epitaxial SmNiO3 tensile strained thin film Titanium dioxide (TiO 2 ) thin films were deposited on unheated quartz (SiO 2 ) substrates in ''pure oxygen'' plasma by reactive radio-frequency ͑rf͒ magnetron sputtering. The structural and optical properties of deposited films were systematically studied by changing the deposition parameters, and it was very recently found that crystalline TiO 2 films grew effectively in pure O 2 atmosphere. For TiO 2 films deposited at a rf power P rf of 200 W, x-ray diffraction patterns show the following features: ͑a͒ no diffraction peak was observed at a total sputtering pressure p tot of 1.3 Pa; ͑b͒ rutile ͑110͒ diffraction was observed at 4.0 Pa, ͑c͒ the dominant diffraction was from anatase ͑101͒ planes, with additional diffraction from ͑200͒, under p tot between 6.7 and 13 Pa. For the deposition at 140 W, however, crystalline films with mixed phases were observed only between 4.0 and 6.7 Pa. The peaks of both the deposition rate and the anatase weight ratio for the films produced at 140 W were found at p tot of approximately 6.7 Pa. This suggests that the nucleation and growth of TiO 2 films were affected by the composition, density, and kinetic energy of the particles impinging on the substrate surface. The optical absorption edge analysis showed that the optical band gap E g and the constant B could sensitively detect the film growth behavior, and determine the film structure and optical absorption. The change in the shape of the fundamental absorption edge is considered to reflect the variation of density and the short-range structural modifications.

One of the long-standing problems to improve the resolution of organic electroluminescence devices has been related to the fabrication of very smooth, high-quality indium tin oxide (ITO) layers at room temperature. It seems that this problem could be solved by low-energy oxygen-ion-beam assisted electron-beam evaporation of ITO bulk material in vacuum. The oxygen ions were produced in an electron cyclotron resonance source with energies varied between 50 and 1000 eV. The growth rate changes from 0.04 to 0.23 nm/s. The structural, electrical and optical properties were characterized by x-ray diffraction, Rutherford backscattering, atomic force microscopy, Hall-effect and optical transmittance measurements. Crystalline structure, which depends only on the thickness of the deposited ITO films, can be easily obtained at room temperature. A very smooth surface of only 0.6 nm roughness (root mean square), almost one order smaller than that prepared by other methods, low resistivity of 7.0×10−4 Ω cm, high carrier density of 6.1×1020 cm−3, and high optical transmittance of 85% at wavelength 550 nm (including the glass substrate) could be repeatedly achieved at room temperature.

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