We develop a laser produced plasma light source for high volume manufacturing (HVM) EUV lithography. The light source is based on a short pulse, high power, high repetition rate CO 2 master oscillator power amplifier (MOPA) laser system and a Tin droplet target. A maximum conversion efficiency of 4.5% was measured for a CO 2 laser driven Sn plasma having a narrow spectrum at 13.5 nm. In addition, low debris generation was observed. The CO 2 MOPA laser system is based on commercial high power cw CO 2 lasers. We achieve an average laser power of 6 kW at 100 kHz with a single laser beam that has very good beam quality. In a first step, a 50-W light source is developing. Based on a 10-kW CO 2 laser this light source is scalable to more than 100 W EUV in-band power.

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