Articles you may be interested in Circularly polarized terahertz radiation monolithically generated by cylindrical mesas of intrinsic Josephson junctions

A terahertz (THz) wave emitter using the stack of intrinsic Josephson junctions present in the high-Tc superconductor Bi2Sr2CaCu2O8+δ (Bi2212) has been developed. By applying a dc voltage V across the stack, the ac-Josephson effect converts this to an ac-current that emits photons at the Josephson frequency proportional to V. The Bi2212 device also behaves as and electromagnetic (EM) cavity, so depending upon the shape of the Bi2212 crystal, when the Josephson frequency matches that of a cavity resonance, the emission power is enhanced. However, the EM radiation characteristics also strongly depend upon the effects of Joule self heating of the device. In order to alleviate this Joule heating problem, we fabricated three distinct stand-alone Bi2212 sandwich device shapes, each crystal being first covered with Au on its top and bottom, and then sandwiched between sapphire plates. From our comparative studies of the three devices, we obtained important clues that could help to increase the emission power up to ∼mW and the frequency range up to several THz, as necessary for many applications such as security screening, high speed communications, medical and biological sensing, and astronomical detection, etc.

Joule heating is the central issue in order to develop high-power and high-performance terahertz (THz) emission from mesa devices employing the intrinsic Josephson junctions in a layered high transition-temperature Tc superconductor. Here, we describe a convenient local thermal measurement technique using charge-coupled-device-based thermoreflectance microscopy, with the highest spatial resolution to date. This technique clearly proves that the relative temperature changes of the mesa devices between different bias points on the current-voltage characteristics can be measured very sensitively. In addition, the heating characteristics on the surface of the mesa devices can be detected more directly without any special treatment of the mesa surface such as previous coatings with SiC micro-powders. The results shown here clearly indicate that the contact resistance strongly affects the formation of an inhomogeneous temperature distribution on the mesa structures. Since the temperature and sample dependencies of the Joule heating characteristics can be measured quickly, this simple thermal evaluation technique is a useful tool to check the quality of the electrical contacts, electrical wiring, and sample defects. Thus, this technique could help to reduce the heating problems and to improve the performance of superconducting THz emitter devices.

The radiation intensity from the intrinsic Josephson junction high-Tc superconductor Bi2Sr2CaCu2O8+δ terahertz emitters (Bi2212-THz emitters) is one of the most important characteristics for application uses of the device. In principle, it would be expected to be improved with increasing the number of intrinsic Josephson junctions N in the emitters. In order to further improve the device characteristics, we have developed a stand alone type of mesa structures (SAMs) of Bi2212 crystals. Here, we understood the radiation characteristics of our SAMs more deeply, after we studied the radiation characteristics from three SAMs (S1, S2, and S3) with different thicknesses. Comparing radiation characteristics of the SAMs in which the number of intrinsic Josephson junctions are N∼ 1300 (S1), 2300 (S2), and 3100 (S3), respectively, the radiation intensity, frequency as well as the characteristics of the device working bath temperature are well understood. The strongest radiation of the order of few tens of microwatt was observed from the thickest SAM of S3. We discussed this feature through the N2-relationship and the radiation efficiency of a patch antenna. The thinner SAM of S1 can generate higher radiation frequencies than the thicker one of S3 due to the difference of the applied voltage per junctions limited by the heat-removal performance of the device structures. The observed features in this study are worthwhile designing Bi2212-THz emitters with better emission characteristics for many applications.

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