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The silicon-on-insulator (SOI) lateral doublediffused metal-oxide-semiconductor (LDMOS) with high-k multi-fingers (HKMFs) is proposed and investigated. The fingertips are distributed at specific locations to modulate the electric field distributions and improve the device performances. First, the electric field peaks formed at the fingertips could optimize the electric field distributions, which improves the breakdown voltage (BV) of the LDMOS effectively. Meanwhile, the multi-fingers are embedded into the drift region to increase the optimal drift doping concentration, which facilitates the positive conduction of the device and reduces the specific ON-resistance (R on,sp ). The simulation results show that the proposed HKMF-LDMOS with five multi-fingers increases the BV by 59.2%, reduces R on,sp by 37.8%, and improves the figure of merit (FOM) by 4.07 times when compared to the conventional LDMOS.

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