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The titanium nitride (TiN) gate electrode with a tunable work function has successfully been deposited on the sidewalls of upstanding Si-fin channels of FinFETs by using a conventional reactive sputtering. It was found that the work function of the TiN ( TiN ) slightly decreases with increasing nitrogen (N 2 ) gas flow ratio, = N 2 (Ar + N 2 ) in the sputtering, from 17% to 100%. The experimental threshold voltage ( th ) dependence on the shows that the more offers the lower th for the TiN gate n-channel FinFETs. The composition analysis of the TiN films with different showed that the more amount of nitrogen is introduced into the TiN films with increasing , which suggests that the lowering of TiN with increasing should be related to the increase in nitrogen concentration in the TiN film. The desirable th shift from 0.22 to 0.22 V was experimentally confirmed by fabricating n + poly-Si and TiN gate n-channel multi-FinFETs without a channel doping. The developed simple technique for the conformal TiN deposition on the sidewalls of Si-fin channels is very attractive to the TiN gate FinFET fabrication.

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