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liN gate FinFETSRAMhalf-cells withdifferent J3-ratios from 1-3 have successfully been fabricated by usingthe orientation dependent wetetching andconventional reactive sputtering, forthefirst time. It is experimentally foundthatstaticmise margin (SNM)atreadcondition increases with increasing J3-ratio due to the strength of pull-down transistor. Toovercome SRAM cellsize increment withincreasing p, a fin-height controlled pass-gate (PG)SRAMstructure isproposed.