Development and market introduction of new nanomaterials trigger the need for an adequate risk assessment of such products alongside suitable risk communication measures. Current application of classical and new nanomaterials is analyzed in context of regulatory requirements and standardization for chemicals, food and consumer products. The challenges of nanomaterial characterization as the main bottleneck of risk assessment and regulation are presented. In some areas, e.g., quantification of nanomaterials within complex matrices, the establishment and adaptation of analytical techniques such as laser ablation inductively coupled plasma mass spectrometry and others are potentially suited to meet the requirements. As an example, we here provide an approach for the reliable characterization of human exposure to nanomaterials resulting from food packaging. Furthermore, results of nanomaterial toxicity and ecotoxicity testing are discussed, with concluding key criteria such as solubility and fiber rigidity as important parameters to be considered in material development and regulation. Although an analysis of the public opinion has revealed a distinguished rating depending on the particular field of application, a rather positive perception of nanotechnology could be ascertained for the German public in general. An improvement of material characterization in both toxicological testing as well as end-product control was concluded as being the main obstacle to ensure not only safe use of materials, but also wide acceptance of this and any novel technology in the general public.

Germanium is a promising material for future very large scale integration transistors, due to its superior hole mobility. However, germanium-based devices typically suffer from high reverse junction leakage due to the low band-gap energy of 0.66 eV and therefore are characterized by high static power dissipation. In this paper, we experimentally demonstrate a solution to suppress the off-state leakage in germanium nanowire Schottky barrier transistors. Thereto, a device layout with two independent gates is used to induce an additional energy barrier to the channel that blocks the undesired carrier type. In addition, the polarity of the same doping-free device can be dynamically switched between p- and n-type. The shown germanium nanowire approach is able to outperform previous polarity-controllable device concepts on other material systems in terms of threshold voltages and normalized on-currents. The dielectric and Schottky barrier interface properties of the device are analyzed in detail. Finite-element drift-diffusion simulations reveal that both leakage current suppression and polarity control can also be achieved at highly scaled geometries, providing solutions for future energy-efficient systems.

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Nanolayer stacks are technologically very relevant for current and future applications in many fields of research. A non-destructive characterization of such systems is often performed using X-ray reflectometry (XRR). For complex stacks of multiple layers, low electron density contrast materials or very thin layers without any pronounced angular minima, this requires a full modeling of the XRR data. As such modeling is using the thicknesses, the densities and the roughnesses of each layer as parameters, this approach quickly results in a large number of free parameters. In consquence, cross-correlation effects or interparameter dependencies can falsify the modeling results. Here, we present a route for validation of such modeling results which is based on the reference-free grazing incidence X-ray fluorescence (GIXRF) methodology. In conjunction with the radiometrically calibrated instrumentation of the Physikalisch-Technische Bundesanstalt the method allows for reference-free quantification of the elemental mass depositions. In addition, a modeling approach of reference-free GIXRF-XRR data is presented, which takes advantage of the quantifiable elemental mass depositions by distributing them depth dependently. This approach allows for a reduction of the free model parameters. Both the validation capabilities and the combined reference-free GIXRF-XRR modeling are demonstrated using several nanoscale layer stacks consisting of HfO 2 and Al 2 O 3 layers.