No abstract

No abstract

No abstract

Since the announcement in March 2002 of plans to develop an advanced light source to meet the future spectral power and cost requirements of photolithography, we have made significant progress in the development and productization of the core technology for an ultra line-narrowed, excimer light source based on a master oscillator-power amplifier (MOPA) approach. In this paper, we will focus on the architecture and performance of the first generation of production-ready, MOPA-based ArF light sources developed at Cymer, Inc. This first generation of MOPA-based ArF light sources is referred to as the XLA 100 product series.

Laser produced plasma (LPP) systems have been developed as the primary approach for the EUV scanner light source for optical imaging of circuit features at sub-22nm and beyond nodes on the ITRS roadmap. This paper provides a review of development progress and productization status for LPP extreme-ultra-violet (EUV) sources with performance goals targeted to meet specific requirements from leading scanner manufacturers. We present the latest results on exposure power generation, collection, and clean transmission of EUV through the intermediate focus.Semiconductor industry standards for reliability and source availability data are provided. We report on measurements taken using a 5sr normal incidence collector on a production system. The lifetime of the collector mirror is a critical parameter in the development of extreme ultra-violet LPP lithography sources. Deposition of target material as well as sputtering or implantation of incident particles can reduce the reflectivity of the mirror coating during exposure. Debris mitigation techniques are used to inhibit damage from occuring, the protection results of these techniques will be shown over multi-100's of hours.