Xenon spectra involving emission from ion species of Xe7+ to Xe12+ were analyzed for a plasma focus discharge developed for extreme ultraviolet lithography. Low and higher resolution spectra were recorded in the 8–21 nm wavelength region for different operating conditions and different He–Xe gas mixtures. The spectra have been compared with Hartree–Fock calculations. The modeling included the distribution of the various xenon ion levels at a given electron equilibrium temperature and plasma opacity effects. Spectral analysis showed that the 4d–5p transition arrays are fairly well separated in wavelength for the ions Xe8+ to Xe11+. Good agreement between experiment and calculations was obtained for line positions and intensities, in particular, for the wavelength region at around 13.5 nm.

The application of a dense plasma focus pinch discharge as a light source for extreme ultraviolet (EUV) lithography is discussed. For operation with xenon gas, the radiation emitted at around 13.5 nm is analysed with temporal, spectral or spatial resolution. We describe and compare the operating characteristics and plasma dynamics of the device when energized at positive and negative polarity of the charging voltage. The thermal load distribution, heat deposition and wear of the electrodes are measured and compared for both configurations. High-repetition rate burst mode data show characteristic transients. Source size data are also obtained when tin powder is used as the target element. More favourable performance characteristics were generally obtained for operation of the pinch discharge at negative polarity.

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