An output capacitor-less low-dropout (OCL-LDO) regulator with a wide range of load currents is proposed in this study. The structure of the proposed regulator is based on the flipped-voltage-follower LDO regulator. The feedback loop of the proposed regulator consists of two stages. The second stage is turned on or off depending on the variation in the output load current. Hence, the regulator can retain a phase margin at a wide range of load currents. The proposed regulator exhibits a better regulation performance compared to the ones in previous studies. The test chip is fabricated using a 65-nm CMOS process.

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In this paper, we proposed a SPICE model of high-voltage insulated gate bipolar transistor(IGBT). The proposed model consists of two sub-devices, a MOSFET and a BJT. Basic I-V characteristics and their temperature dependency were realized by adjusting various parameters of the MOSFET and the BJT. To model nonlinear parasitic capacitances such as a reverse-transfer capacitance, multiple junction diodes, ideal voltage and current amplifiers, a voltage-controlled resistor, and passive devices were added in the model. The accuracy of the proposed model was verified by comparing the simulation results with the experimental results of a 1200V trench gate IGBT.