No abstract

In this paper, we proposed a SPICE model of high-voltage insulated gate bipolar transistor(IGBT). The proposed model consists of two sub-devices, a MOSFET and a BJT. Basic I-V characteristics and their temperature dependency were realized by adjusting various parameters of the MOSFET and the BJT. To model nonlinear parasitic capacitances such as a reverse-transfer capacitance, multiple junction diodes, ideal voltage and current amplifiers, a voltage-controlled resistor, and passive devices were added in the model. The accuracy of the proposed model was verified by comparing the simulation results with the experimental results of a 1200V trench gate IGBT.