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A vertical bi-stable resistor (biristor) composed of In 0.53 Ga 0.47 As was demonstrated for sub-1 V operation. An inherent small bandgap and a scaled base length of 150 nm led to the remarkable reduction in latchup voltage compared to Si(Ge)-based conventional biristors. The epitaxially grown n-p-n structure allowed an abrupt p-n junction, which was also very important to reduce the latchup voltage. Furthermore, the physical mechanism of carrier transport in the InGaAs biristor was explored with TCAD simulations.Index Terms-3-D integration, abrupt junction artificial neural network, epitaxial growth, impact ionization, InGaAs, vertical biristor. I. INTRODUCTIONA LTHOUGH the capacitor-less one-transistor dynamic random-access memory (1T-DRAM) has shown great potential of being able to replace conventional DRAM with a higher packing density beyond 4F 2 , its three-terminal structure suffers from inherent gate reliability issues, such as hot carrier injection. [1], [2] To mitigate these issues, the bistable-resistor abbreviated as "biristor", has been developed. A biristor is an open-based two-channel bipolar junction transistor with a collector-base-emitter structure with a doping profile of either n + -p-n + or p + -n-p + . Biristors have shown promising characteristics with enhanced endurance and reliability for post-DRAM technology applications thanks to their gate-less operation. [3]-[6] Compared to 1T-DRAM, another attractive aspect of biristors is their potential for further cell size reduction thanks to their gate-less structure. In principle, when a biristor is formed vertically, the packing density can be reduced to be as small

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