Two-dimensional transition-metal
chalcogenide has become one of
the most promising materials for miniaturization beyond Moore’s
law due to its atomic-level thickness and excellent semiconductor
properties. The inverter is the most basic logic gate circuit. Using
double-temperature zone chemical vapor deposition and oxygen plasma
doping technique, we obtained n-type and p-type MoS2 materials
and designed an MoS2 CMOS inverter, showing excellent electrical
performance. Under the condition of V
dd = 5 V, the peak voltage gain of the inverter is 7.48, the maximum
static power consumption is 37.7 nW, the noise margin low is 0.45V
dd, the noise margin high is 0.32V
dd, and the inverter exhibits better V
in–V
out signal matching.
After a 42 day duration in an air environment at room temperature,
the V
out of the inverter was reduced by
only 3.75% in the case of a high level of output voltage, and the
low level of output voltage is basically unchanged.
Cadmium selenide (CdSe) solar cells have proven to be a remarkable potential top cell for a silicon-based tandem application. However, the defects and short carrier lifetimes of CdSe thin films greatly limit the solar cell performance. In this work, a Te-doped strategy is proposed to passivate the Se vacancy defects and increase the carrier lifetime of the CdSe thin film. The theoretical calculation helps to reveal the mechanism of nonradiative recombination of the CdSe thin film in depth. After Te-doping, the calculated capture coefficient of CdSe can be reduced from 4.61 × 10 −8 cm 3 s −1 to 2.32 × 10 −9 cm 3 s −1 . Meanwhile, the carrier lifetime of CdSe thin film is increased nearly 3fold from 0.53 to 1.43 ns. Finally, the efficiency of the Cd(Se,Te) solar cell is improved to 4.11%, about a relative 36.5% improvement compared to the pure CdSe solar cell. Both theoretical calculations and experiments prove that Te can effectively passivate bulk defects and improve the carrier lifetime of CdSe thin films, deserving further exploration to improve solar cell performance.
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