Abstruct-1-V power supply high-speed low-power digital circuit technology with 0.5-pm multithreshold-voltage CMOS (MTCMOS) is proposed. This technology features both lowthreshold voltage and high-threshold voltage MOSFET's in a single LSI. The low-threshold voltage MOSFET's enhance speed Performance at a low supply voltage of 1 V or less, while the high-threshold voltage MOSFET's suppress the stand-by leakage current during the sleep period. This technology has brought about logic gate characteristics of a 1.7-11s propagation delay time and 0.3-pW/MHz/gate power dissipation with a standard load. In addition, an MTCMOS standard cell library has been developed so that conventional CAD tools can be used to lay out low-voltage LSI's. To demonstrate MTCMOS's effectiveness, a PLL LSI based on standard cells was designed as a carrying vehicle. 18-MHz operation at 1 V was achieved using a 0.5-pm CMOS process.

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A highly stable triple-integration noise-shaping technology is dkcnssed which permits greater accuracy for monolithic audio A-to-D converters. Based on this new technology, using 2-p,m CMOS technology, a 16-blt 24-kHz bandwidth A-to-D converter LSIwith digital filters was successfully developed. An SNR (S\(N + THD)) of 91 dB and a total harmonic distortion (THD) of 0.002 percent at hall-scale input were attained.

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