The effect of the formation of thin films of nickel silicides on the migration of intrinsic p -type impurities in silicon was studied for the first time. It was found that bulk resistance $${{\rho }_{{v}}}$$ of a single Si crystal increases by a factor of 3–4 if  a NiSi_2 film with thickness θ ≥ 50–100 Å forms on its surface. This is attributable to the migration of boron atoms toward the silicide film. The Si layer thickness enabling measurable boron migration was estimated at 800–1000 Å.

No abstract

No abstract

Изучено влияние бомбардировки ионами Ar+ на состав, зонно-энергетические параметры и оптические свойства пленок CdS. Показано, что при низких дозах ионов Ar+ (D ≤ 5×1015 см−2) поверхность обогащается атомами S, а при высоких дозах (D ≥ 5×1015 см−2) атомами Cd.

No abstract