0.10 /spl mu/m graded InGaAs channel InP HEMT with 305 GHz f/sub T/ and 340 GHz f/sub max/

Optical repeater circuit design based on InAlAs/InGaAs HEMT digital IC technology

“…Therefore, faster devices are the key to achieving a higher bit rate. InP HEMT offers the highest cutoff frequency and maximum frequency of oscillation of all semiconductor devices [10], [11], and is a good candidate to achieve digital IC's that can operate over 40 Gb/s. It should be noted that due to interconnection parasitic loss, the influence of gate-to-drain 0018-9480/97$10.00 © 1997 IEEE and feedback delay, the operating speed of D-F/F's is not directly proportional to transistor performance.…”

Breakdown in millimeter-wave power InP HEMTs: a comparison with GaAs PHEMT's

“…Composite channels [34], [35], compositionally graded channels [36], and quantized channels [35] have all been investigated toward this goal, although longlasting benefit has not been obtained beyond 60 GHz. Cap recess engineering should also be an effective approach for improving .…”

Gate-Geometric Recessed Nanoscale <formula formulatype="inline"><tex Notation="TeX">$\hbox{In}_{0.52} \hbox{Al}_{0.48}\hbox{As}$</tex></formula>&#x2013;<formula formulatype="inline"><tex Notation="TeX">$\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$</tex></formula> Double-Gate HEMT for High Breakdown

“…As high breakdown voltage is one of the necessary requirements for achieving superior power performance, various approaches have been adopted to overcome this intrinsic shortcoming of InGaAs channel devices, and some of these include channel engineering that involves employing of new materials (quantized InAs channel [9], [10] or InP channel) or using composite/graded channel [11], [12], enhancement in Schottky barrier height of the gate, and gate-recess engineering (single/double recess) [13], [14]. However, each modification is associated with some detrimental effects; for example, the use of InP (high bandgap, i.e., 1.35 eV) improves the breakdown parameters, but the low mobility of InP severely degrades the RF performance of the device.…”