Breakdown in millimeter-wave power InP HEMTs: a comparison with GaAs PHEMT's

Alamo, J.A. del; Somerville, Mark

doi:10.1109/4.782077

Cited by 35 publications

(11 citation statements)

References 39 publications

(42 reference statements)

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“…In InGaAs high-electron-mobility transistors, floating body effects associated with hole generation through impact ionization have also been widely reported [13]- [15]. These have been found to result in the kink effect, excess gate leakage, excess and frequency-dependent output conductance, and premature breakdown and burnout [16].…”

Section: Introductionmentioning

confidence: 99%

Physics and Mitigation of Excess OFF-State Current in InGaAs Quantum-Well MOSFETs

Lin

Antoniadis

Alamo

2015

IEEE Trans. Electron Devices

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A number of recent reports have noted excess OFF-state leakage current (I OFF ) in scaled InGaAs quantum-well nMOSFETs. There is growing evidence that a combination of band-to-band tunneling (BTBT) and a floating-body bipolar gain effect is responsible for this. Unless this issue is effectively addressed, the scaling potential of this transistor structure will be compromised. This paper presents a detailed study of the physics of I OFF and explores I OFF reduction strategies through 2-D device simulations that have been calibrated with experiments. In essence, under OFF conditions at even moderate values of V ds , a BTBT process at the drain-end generates holes in the channel and thereby reduces the source-channel potential barrier. This results in injection of electrons into the channel that contribute to enhanced I OFF while the holes are injected into the source where they recombine. In a nanoscale device, the bipolar effect that is at play here can have a very large current gain and amplify many fold even a small BTBT current. A study of approaches to mitigating this effect is analyzed here. It is concluded that the most effective strategy is to minimize the bipolar current gain rather than BTBT in scaled transistors.Index Terms-III-V, band-to-band tunneling (BTBT), bipolar effect, floating body, MOSFETs, quantum-well (QW), self-aligned.

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Section: Introductionmentioning

confidence: 99%

Physics and Mitigation of Excess OFF-State Current in InGaAs Quantum-Well MOSFETs

Lin

Antoniadis

Alamo

2015

IEEE Trans. Electron Devices

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“…In the case of high devices, tunneling/TFE appears to be the only consideration for . Thus, one would expect high devices with different channel compositions but similar values to show similar breakdown voltages [2], [9]. On the other hand, as is decreased, the relative importance of II grows.…”

Section: The Gate Current Ratio Measurementmentioning

confidence: 99%

“…For InAlAs/InGaAs devices, high-temperature and low-temperature currents should diverge as is increased, due to IIs positive temperature dependence. Finally, devices in which II has a negative temperature coefficient, such as GaAs pHEMTs [9] should display the classic "twist" in the gate current characteristics [10] [ Fig. 2(c)].…”

Section: The Gate Current Ratio Measurementmentioning

confidence: 99%

Determining dominant breakdown mechanisms in InP HEMTs

Somerville

Putnam²,

Alamo³

2001

IEEE Electron Device Lett.

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Abstract-We present a new technique for determining the dominant breakdown mechanism in InAlAs/InGaAs high-electron mobility transistors. By exploiting both the temperature dependence and the bias dependence of different physical mechanisms, we are able to discriminate impact ionization gate current from tunneling and thermionic field emission gate current in these devices. Our results suggest that doping level of the supply layers plays a key role in determining the relative importance of these two effects.

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“…A −20 dB/dec extrapolation of | h 21 | 2 and of Mason's maximum unilateral gain U yields f T = 43 GHz and f MAX = 77 GHz. Figure 5 shows the OFF-state breakdown voltage characterization of BV DS = 110 V and BV GD = 130 V, as determined by the drain current injection technique of [10]. The f T × BV products reach values as high as 5.6 THz-V, and 10 THz-V when it comes to f MAX × BV .…”

Section: Comparison Of Hemts On Hr-si and Sapphire Substratesmentioning

confidence: 99%

Millimeter-wave GaN-based HEMT development at ETH-Zürich

Sun

Marti

Tirelli

et al. 2010

Int. j. microw. wirel. technol.

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We review the AlGaN/GaN high electron mobility transistor (HEMT) activities in the Millimeter-Wave Electronics Group at ETH-Zürich. Our group's main thrust in the AlGaN/GaN arena is the extension of device bandwidth to higher frequency bands. We demonstrated surprising performances for AlGaN/GaN HEMTs grown on high-resistivity (HR) silicon (111) substrates, and extended cutoff frequencies of 100 nm gate devices well into the millimeter (mm)-wave domain. Our results narrow the performance gap between GaN-on-SiC (or sapphire) and GaN-on-silicon and establish GaN-on-Si as a viable technology for low-cost mm-wave electronics. We here contrast the difference in behaviors observed in our laboratory between nominally identical devices built on high-resistivity silicon (HR-Si) and on sapphire substrates; we show high-speed devices with high-cutoff frequencies and breakdown voltages which combine fT,MAX × BV products as high as 5–10 THz V, and show AlGaN/GaN HEMTs with fT values exceeding 100 GHz on HR-Si. Although the bulk of our activities have so far focused on AlGaN/GaN HEMTs on HR-Si, our process produces excellent device performances when applied to GaN HEMTs on SiC as well: 100 nm gate transistors with fT > 125 GHz have been realized at ETH-Zürich.

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Breakdown in millimeter-wave power InP HEMTs: a comparison with GaAs PHEMT's

Cited by 35 publications

References 39 publications

Physics and Mitigation of Excess OFF-State Current in InGaAs Quantum-Well MOSFETs

Physics and Mitigation of Excess OFF-State Current in InGaAs Quantum-Well MOSFETs

Determining dominant breakdown mechanisms in InP HEMTs

Millimeter-wave GaN-based HEMT development at ETH-Zürich

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