Determining dominant breakdown mechanisms in InP HEMTs

Abstract

Abstract-We present a new technique for determining the dominant breakdown mechanism in InAlAs/InGaAs high-electron mobility transistors. By exploiting both the temperature dependence and the bias dependence of different physical mechanisms, we are able to discriminate impact ionization gate current from tunneling and thermionic field emission gate current in these devices. Our results suggest that doping level of the supply layers plays a key role in determining the relative importance of these two effects.

Tradeoff between short channel effect and mobility in strained-Si nMOSFETs

“…This observed result is consistent with the cumulative percentage of threshold voltage in figure 4. DC device characterizations in combination with photon emission microscopy (PEM) [11] are the best method to evaluate the misfit-induced leakage paths. The mechanism and results for failure of a device biased in off-state at V DS = 1.1 V, and V GS = 0 V are shown in figures 6(a), (b).…”

Tunnelling and Impact Ionization in Scaled Double Doped PHEMTs

“…6 and 8 show the thermionic tunnelling assisted gate current again as a function of the drain voltage at the same gate bias. It is clear that the current due to thermionic tunnelling has a different drain voltage dependence compared to the impact ionisation current; increasing relatively sharply at lower drain voltages [13] but then saturates at larger drain voltages. The thresholds for both impact ionization and thermionic tunnelling decrease with device scaling.…”