0.13μm SiGe BiCMOS technology for mm-wave applications

Correlated noise in bipolar transistors: Model implementation issues

“…An HBT with emitter length (l E ) of 5 lm fabricated in the 0:13 lm SiGe:C technology [39] of STMicroelectronics featuring a peak transit frequency (f T;peak ) of 250 GHz was characterized over a wide range of bias and temperature. The DC and RF parameter extraction methods from the measured data and the detailed modeling results using HICUM/L2v2.24G [40] are presented in [41].…”

Advanced process modules and architectures for half-terahertz SiGe:C HBTs

“…The most advanced high-speed SiGe BiCMOS technology at STMicroelectronics (BiCMOS9MW [7]) features a SA selective epitaxial base transistor too. This technology offers a 230 / 290-GHz f T / f max HBT, dual V T (high performance / low leakage) and dual gate oxide (1.2 V / 2.5 V) 120-nm CMOS devices, passives and a 6-level copper back-end for which the 2 highest are 3 µm-thick.…”

“…The selective epitaxial growth of the base in a cavity defined by the emitter window provides the emitter-base self-alignment. Although the selective epitaxial base growth process is more complicated than a non-selective process, it has proven to be manufacturable and is widely used in industry [6][7][8][9]. Due to the self-alignment, the link base region, between the intrinsic (monocrystalline) base and the extrinsic (p+ doped polycrystalline) base, contributes less to the total base resistance.…”

Dispersion study of DC and Low Frequency Noise in SiGe:C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications

“…In Section 4, we present measurements of the Low Frequency Noise as a function of bias and geometry followed by a statistical approach in the same section and finally the conclusion in Section 5. contacts. More information can be found in [6]. A schematic cross section of one SiGe HBT is shown in Fig.…”