0.3-μm gate-length enhancement mode InAlAs/InGaAs/InP high-electron mobility transistor

Mahajan, A.; Arafa, M.; Fay, Patrick; Caneau, C.; Adesida, I.

doi:10.1109/55.585360

Cited by 38 publications

(13 citation statements)

References 6 publications

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“…C gs ≈ q · L g · dn S dV GS [3] where g ds is the output conductance, R S is the source resistance, and n S is the electron sheet density in the 2DEG channel. The R S is composed of contact resistances and resistances of the different parts of the epitaxial layer within the gate-source region.…”

Section: Resultsmentioning

confidence: 99%

Improved Low-Frequency Noise and Microwave Performance of Enhancement-Mode InGaP/InGaAs PHEMT with a Liquid-Phase Oxidized GaAs without a Gate Recess

Lee

Chen

2012

ECS Solid State Letters

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This paper demonstrates an enhancement-mode InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (PHEMT) with a liquid-phase oxidized GaAs gate without a gate recess. Without a gate recess, the gate insulator is obtained directly by oxidizing the GaAs capping layer in the LPO growth solution, and fully planar surface is achieved around the active region. The proposed device shows a maximum transconductance of 141 mS/mm at V DS = 2 V and a maximum drain current density of 145 mA/mm at V GS = 2 V and V DS = 2 V. It also exhibits lower leakage current, improved subthreshold swing, suppressed low-frequency noise, and enhanced microwave performance than those of the referenced PHEMT.The advantages of using enhancement-mode (E-mode) pseudomorphic high-electron-mobility transistors (PHEMTs) as power devices for single supply operations have been recognized for some time. These advantages can facilitate circuit design and construction and render them less complex. They can also improve dc power consumption, efficiency, and operation time; 1 this has led to interest in applications for cellular phones. The buried gate approach 2,3 or double recess process 4,5 are commonly used techniques for high-performance E-mode PHEMTs. However, the gate-recess process creates more surface states that induce a gate leakage issue and generate parasitic capacitances that degrade device performance. Moreover, the Schottky barrier heights may still suffer from gate leakage issue. Suitable oxidation or passivation can satisfy dangling bonds, which reduce surface recombination centers and suppress carrier trapping within the surface states. In other words, using an oxide film to form a metaloxide-semiconductor (MOS) structure for metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) fabrication could improve the microwave characteristics and lowfrequency noise associated with the surface state and lattice scattering.Over the past years, a simple and selective liquid phase oxidation (LPO) on GaAs operated at low temperature (30-70 • C) has been proposed and investigated. 6 Previous works have reported the preliminary study of the dc performance, the pulse transient characteristics, 7 and RF performance 8 of the depletion-mode (Dmode) InGaP/InGaAs MOS-PHEMT. The pulse transient measurement shows much less impact of the surface trap effects for the D-mode MOS-PHEMT. However, the literature focuses less on the low-frequency noise and microwave characteristics of the E-mode InGaP/InGaAs MOS-PHEMT. 9 Low-frequency noise measurement is a commonly used method to investigate MOS interface properties of MOS-PHEMTs 10,11 and surface treatment properties of PHEMTs. 12,13 This paper presents a discussion on the low-frequency noise and microwave performance of an E-mode InGaP/InGaAs MOS-PHEMT with an oxidized GaAs gate without a gate recess to further understand the role of the gate insulator. Without a gate recess, the gate insulator is obtained directly by oxidizing the GaAs capping layer...

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Section: Resultsmentioning

confidence: 99%

Improved Low-Frequency Noise and Microwave Performance of Enhancement-Mode InGaP/InGaAs PHEMT with a Liquid-Phase Oxidized GaAs without a Gate Recess

Lee

Chen

2012

ECS Solid State Letters

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“…This process, however, simultaneously produces a highly resistive uncapped region around the gate periphery due to side etching, which results in the fatal degradation of device performance. Pt-based buried-gate technology can be used to overcome this problem [225][226][227]. In general, InP HEMTs have an InGaAs channel layer (Indium content can be 53-75% depends upon application) and an InAlAs supply layer grown on the InP substrate using metal organic chemical vapor deposition (MOCVD) crystal growth technique.…”

Section: Developments In Indium Phosphide Hemtsmentioning

confidence: 99%

A review of InP/InAlAs/InGaAs based transistors for high frequency applications

Ajayan

Nirmal

2015

Superlattices and Microstructures

131

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“…The gate metal, Pt/Ti/Pt/Au, was then deposited. After gate metal liftoff, the devices were annealed at 350 C for 60 s to produce a positive threshold voltage device [2]. After gate formation, the devices were passivated with PECVD SiN.…”

Section: Device Structure Growth and Fabricationmentioning

confidence: 99%

Metamorphic InAlAs/InGaAs enhancement mode HEMTs on GaAs substrates

Eisenbeiser

Droopad

Huang

1999

IEEE Electron Device Lett.

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In 0:5 Al 0:5 As/In 0:5 Ga 0:5 As HEMT's have been grown metamorphically on GaAs substrates oriented 6 off (100) toward (111)A using a graded InAlAs buffer. The devices are enhancement mode and show good dc and RF performance. The 0.6-m gate length devices have saturation currents of 262 mA/mm at a gate bias of 0.7 V and a peak transconductance of 647 mS/mm. The 0.6 m 2 2 2 3 mm devices tested on-wafer have output powers up to 30 mW/mm and 46% power-addedefficiency (PAE) at 1 V drain bias and 850 MHz. When biased and matched for best efficiency performance, this same device has up to 68% PAE at V V V d d d = 1 V.

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0.3-μm gate-length enhancement mode InAlAs/InGaAs/InP high-electron mobility transistor

Cited by 38 publications

References 6 publications

Improved Low-Frequency Noise and Microwave Performance of Enhancement-Mode InGaP/InGaAs PHEMT with a Liquid-Phase Oxidized GaAs without a Gate Recess

Improved Low-Frequency Noise and Microwave Performance of Enhancement-Mode InGaP/InGaAs PHEMT with a Liquid-Phase Oxidized GaAs without a Gate Recess

A review of InP/InAlAs/InGaAs based transistors for high frequency applications

Metamorphic InAlAs/InGaAs enhancement mode HEMTs on GaAs substrates

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