3.6-Times Higher Acceptable Raw Bit Error Rate, 97% Lower-Power, NV-RAM &amp;amp; NAND-Integrated Solid-State Drives (SSDs) with Adaptive Codeword ECC

2013

ECS Trans.

SSDs and emerging storage class non-volatile semiconductor memories (SCM) such as PCRAM, FeRAM, ReRAM and MRAM have enabled innovations in various nano-scale VLSI memory systems for personal computers, multimedia applications and enterprise servers. This paper provides a comprehensive review on state-ofthe-art data management technologies of storage class memory and NAND flash memory hybrid solid-state drives (SSDs) [1,2].

Section: Discussionmentioning

confidence: 99%

(Invited) Storage Class Memory and NAND Flash Memory Hybrid Solid-State Drives (SSD)

2013

ECS Trans.

“…An adaptive codeword ECC (Error Correcting Code) for NV-RAM (Non Volatile RAM) and NAND flash memory integrated SSD is proposed in [4] to improve the memory cell reliability by 3.6-times. In the proposed SSD, NV-RAM such as RRAM, PRAM and MRAM is used as write buffers (Fig.…”

Section: Scm and Nand Flash Hybrid Memory Systemmentioning

confidence: 99%

“…13 compares the SSD power consumption. The paper [4] proposes the integrated ECC for NV-RAM and NAND which corrects errors of both NV-RAM and NAND. The proposed ECC is implemented in the NV-RAM/ NAND controller (Fig.…”

Section: Scm and Nand Flash Hybrid Memory Systemmentioning

confidence: 99%

See 1 more Smart Citation

Highly reliable, high speed and low power NAND flash memory-based Solid State Drives (SSDs)

IEICE Electron. Express

Hatanaka

Tanakamaru

2012

SSDs and emerging storage class non-volatile semiconductor memories such as PCRAM, FeRAM, RRAM and MRAM have enabled innovations in various nano-scale VLSI memory systems for personal computers, multimedia applications and enterprise servers. This paper provides a comprehensive review on various state-of-theart memory system architectures and related memory circuits for the highly reliable, high speed and low power NAND flash memory based SSDs.

“…Non-volatile buffering capability would significantly improve system performance and simplify reliability enterprise, as well as, mobile systems. 1,2) Metal oxide/oxides are among the most promising materials to deliver high endurance, high speed, low voltage and low current operation. [3][4][5][6] Several types of transition metals oxides are currently under investigation, such as NiO, 7,8) Al 2 O 3 , 9) Cu x O, 10) WO x , 11,12) TaO x , 13) and HfO 2,14,15) to name a few.…”

Section: Introductionmentioning

confidence: 99%

Forward and Reverse Biasing in Resistive Memories for Fast, Disturb-Free Read, and Verify

Iwasaki

Ning

2013

Jpn. J. Appl. Phys.

The potential of resistive random access memory (ReRAM) to provide high speed operation is held back by the need to verify during set/reset, and sensitivity to read disturb. 50 nm HfO2 cells are measured for disturb in forward and reverse directions, and at 25 and 85 °C. Two circuit proposals provide speed and reliability improvement. First, bipolar verify reduces write time. If the verify direction matches the set/reset direction, read voltage can be increased, which reduces signal development time, and eliminates the need to switch the highly capacitive source line voltage. Secondly, reverse read with dynamic write-back provides fast, disturb-free read. A margin-check is performed in parallel to normal reverse-read. Disturb of the low resistance state is monitored, and then, if needed, set write-back occurs. Based on disturb data, write-back occurs infrequently, after ∼5×109 reads. By these two proposals, write time can be reduced by 3× and 5× faster read with disturb immunity can be achieved.