5-methyl-1H-benzotriazole as potential corrosion inhibitor for electrochemical-mechanical planarization of copper

Yanfei, Bian; Zhai, Wei; Zhu, Bao-quan

doi:10.1016/s1003-6326(13)62751-x

Cited by 15 publications

(6 citation statements)

References 23 publications

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“…In fine polishing process, the polished surface needs to improve its roughness further, and glycine-TSA based electrolyte can help ECMP achieve lower roughness on copper surface than HEDP-based electrolyte. 11,12 Therefore, glycine-TSA based electrolyte is an option for fine polishing electrolyte. However, even in alkaline solution, sulfate ions may deteriorate surface quality.…”

Section: Methodsmentioning

confidence: 99%

“…However, the MRR was only about 3 nm•min −1 . Bian et al 12 used hydroxyethylidene diphosphonic acid (HEDP) as inhibitor in alkaline electrolyte to reduce the roughness from Ra 13.9 nm to Ra 11.5 nm with MRR greater than 600 nm•min −1 , but the polishing pressure of 1.5 psi with the application of abrasive particles may cause embedding defects. Moreover, it is difficult to prepare a copper wafer with initial roughness less than Ra 20 nm.…”

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confidence: 99%

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Two-Step Electrochemical Mechanical Polishing of Pure Copper

Wu¹,

Kang²,

Niu³

et al. 2019

ECS J. Solid State Sci. Technol.

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It is difficult to achieve low roughness in a short time with high material removal rate (MRR) at low polishing pressure by conventional CMP of copper. To solve this problem, a two-step electrochemical mechanical polishing (ECMP) method consisting of rough polishing and fine polishing at polishing pressure less than 0.3 psi is proposed. Then potentiodynamic polarization, potentiostatic polarization and ECMP experiments were conducted to verify the feasibility of the combined process. The results of rough polishing show that MRR of more than 1 μm·min−1 can be reached with hydroxyethylidene diphosphonic acid (HEDP) based electrolyte. Besides, the roughness can be improved from Ra 610.4 nm to Ra 155.0 nm after 20 min rough polishing. The roughness can be further improved to Ra 4.7 nm after 60 min fine polishing with glycine-benzotriazole (BTA) based electrolyte. The results demonstrated that the two-step ECMP is effective to achieve low surface roughness within a short time.

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Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

Two-Step Electrochemical Mechanical Polishing of Pure Copper

Wu¹,

Kang²,

Niu³

et al. 2019

ECS J. Solid State Sci. Technol.

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“…All experiments were carried out on an simulated electrochemical mechanical polishing equipment [11,12]. The copper removal rate in the experiments is measured by AFM.…”

Section: Methodsmentioning

confidence: 99%

A Model for Design Optimization of Electrochemical Mechanical Polishing Polish Pad

Yanfei¹

2017

IJMEA

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Abstract:The polishing pad plays a vital role in achieving the desired removal rate and level of surface planarity during the electrochemical mechanical planarization (ECMP) process. Material removal rate (MRR) and within wafer non-uniformity (WIWNU) are two important factors in determining the polishing performance. In this work, a theoretical model for predicting the radial distribution of tribasic ammonium citrate (TAC) concentration on the wafer is proposed. The experimentally measured MRR was found as a function of the TAC concentration in the slurry. Hence, the model could not only predict the removal rate at a given point on the wafer surface, but also reflect the WIWNU. Model predictions are in good agreement with the experimental data. The proposed model are used to perform an analysis of the effect of pad designs on the MRR and WIWNU of the wafer.

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“…The existence of a nonpolar methyl group increases the film hydrophobicity, thereby improving the metal corrosion prevention. 13,19,20 In this study, the corrosion inhibition efficiencies of BTA and MBTA were evaluated using static and dynamic etch rates. The etch rates were correlated with the EIS results.…”

mentioning

confidence: 99%

Selection and Optimization of Corrosion Inhibitors for Improved Cu CMP and Post-Cu CMP Cleaning

Ryu

Cho

Yerriboina

et al. 2019

ECS J. Solid State Sci. Technol.

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Corrosion inhibitors play a key role in obtaining global planarization and protecting against corrosion during copper CMP. However, these inhibitors leave organic residues and increase particle contamination after the CMP process, which can directly affect the device yield. Cu CMP is usually performed with a slurry containing silica particles and a BTA corrosion inhibitor. High levels of organic defects and particle contamination are produced due to the high concentration of BTA used to meet CMP requirements. In this work a suitable corrosion inhibitor, 5-methyl-benzotriazole (MBTA), is proposed and used at an optimized concentration to remove organic residues and particle contamination effectively during the post-CMP process. The optimum inhibitor concentration was estimated for BTA and MBTA. Based on etching and EIS studies, it was found that a lower concentration of MBTA (relative to BTA) is needed to provide the conditions required for CMP. The passivation layer formed by MBTA can be removed easily during the post-CMP process. Thus, our results indicate that it is possible to reduce the concentration of the inhibitor while maintaining the same corrosion inhibition efficiency, thereby reducing the particle and organic defect levels.

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5-methyl-1H-benzotriazole as potential corrosion inhibitor for electrochemical-mechanical planarization of copper

Cited by 15 publications

References 23 publications

Two-Step Electrochemical Mechanical Polishing of Pure Copper

Two-Step Electrochemical Mechanical Polishing of Pure Copper

A Model for Design Optimization of Electrochemical Mechanical Polishing Polish Pad

Selection and Optimization of Corrosion Inhibitors for Improved Cu CMP and Post-Cu CMP Cleaning

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