2019
DOI: 10.1016/j.mee.2019.111086
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A compact model for gate tunneling currents in undoped cylindrical surrounding-gate metal-oxide-semiconductor field-effect transistors

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Cited by 6 publications
(6 citation statements)
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“…After improvement was made on the core models in (14,19), the influence of the quantum effect was studied using radius and oxide thickness of strained SG MOSFET. These parameters are important to examine the existence of quantum effects as reported by [5,24,25]. To perform this analysis, the following parameters were considered for comparisons made between the classical and quantum models from simulators: N a =2e12 cm −3 , T=300 K, L=1 um, x=0.3, R=8 nm, h = 1, and = Q 0 f which gave a significant impact on the quantum capacitance.…”
Section: Resultsmentioning
confidence: 99%
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“…After improvement was made on the core models in (14,19), the influence of the quantum effect was studied using radius and oxide thickness of strained SG MOSFET. These parameters are important to examine the existence of quantum effects as reported by [5,24,25]. To perform this analysis, the following parameters were considered for comparisons made between the classical and quantum models from simulators: N a =2e12 cm −3 , T=300 K, L=1 um, x=0.3, R=8 nm, h = 1, and = Q 0 f which gave a significant impact on the quantum capacitance.…”
Section: Resultsmentioning
confidence: 99%
“…Besides, the inversion charge is linearly changed with the threshold voltage as has been explained in figure 9. Meanwhile, for on-state current improvement under strain effect correlated with the changes of the centroid inversion charge and mobility, which dependent on Ge fraction since the model is a function of Q in and m as modelled in (24). Moreover, the mobility of the device with the strain effect is approximated using an empirical approach as formulated in (19).…”
Section: Resultsmentioning
confidence: 99%
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“…To obtain the quantum version of the analytical approach, Poisson's equation is rigorously solved to obtain an analytical expression for potential in the silicon film [15],…”
Section: Surface Potential Modelmentioning
confidence: 99%