A Dynamical Power-Management Demonstration Using Four-Terminal Separated-Gate FinFETs

Endo, Kazuhiko; Ishikawa, Masatoshi; Liu, Ming; Matsukawa,; Ouchi,; Ishii,; Masahara,; Tsukada,; Yamauchi,; Sekigawa,; Koike,; Сузуки,

doi:10.1109/soi.2006.284443

Cited by 3 publications

(3 citation statements)

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“…We can give an additional function to the DG-MOSFET by separating the doublegate and by independently controlling the separated two gates. We have developed the fabrication processes for the fin-type four-terminal DG-MOSFET (4T-FinFET) with two independent gates; (1) combination of the fin channel formation by the crystalline orientation-dependent wet etching and the fin separation by a chemical and mechanical polishing (CMP) [5] or the gate dry etching (RIE), and (2) combination of the fin channel formation by the conventional RIE and the gate RIE [11]. In the CMP process, CMP is performed after the gate material deposition using a SiO 2 mask on the top of the fin channels.…”

Section: Independent Double-gate 4t-dgfet Fabricationmentioning

confidence: 99%

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Advanced DG-MOSFETs Process Technologies

et al. 2007

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Double-gate (DG-) MOSFETs (DGFETs) have received much attention as promising silicon devices for future VLSI circuits thanks to their high short channel effects immunity. The innovative independent-double-gate four-terminal MOSFET (4T-DGFET) enables a new function of the threshold voltage controllability for the optimal power management. In this article, we present the recent progress in the fabrication processes of the fin-type DGFETs (FinFETs) and the 4T-FinFET with the separated double gates.

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Section: Independent Double-gate 4t-dgfet Fabricationmentioning

confidence: 99%

“…By using the developed processes, we have succeeded in the fabrication of a 4T-FinFET CMOS inverter (see Fig.8[11]), and the transfer characteristics are shown in Fig. 9[11].…”

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confidence: 99%

Advanced DG-MOSFETs Process Technologies

et al. 2007

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“…In this study, to find a potential solution for a damage-free nano-scale CMOS fabrication, we evaluated the effect of the NBE on the performance of n-channel 3T-FinFETs [10]. We also investigated fabrication and co-integration of 4T-FinFETs with conventional 3T-FinFETs by a newly developed fabrication process, and successfully demonstrated the power-controllable CMOS inverter operation using the flexible V th 4T-FinFETs [11].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Power-Management Demonstration of Four-Terminal FinFETs

Endo¹,

Liu²,

Masahara³

et al. 2007

ECS Trans.

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A high-aspect-ratio and damage-free vertical ultrathin channel (UTC) for a vertical-type double-gate (DG) MOSFET has been fabricated by using low-energy neutral-beam (NBE) etching. Also, dynamically power-controllable CMOS technology has been investigated using separated-gate four-terminal (4T) FinFETs. We demonstrate that the power consumption of the CMOS inverter can dynamically be controlled using the 4T-FinFET.

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