A new analytical model for photo-dependent capacitances of GaAs MESFET’s with emphasis on the substrate related effects

Murty, N. V. L. Narasimha; Jit, Satyabrata

doi:10.1016/j.sse.2006.09.017

Cited by 8 publications

(3 citation statements)

References 29 publications

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“…[12][13][14][15] Singh et al 12 reported an ana-lytical model for the gate-source and gate-drain capacitances of long gate length enhancement mode optically controlled GaAs MESFET device. [12][13][14][15] Singh et al 12 reported an ana-lytical model for the gate-source and gate-drain capacitances of long gate length enhancement mode optically controlled GaAs MESFET device.…”

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confidence: 99%

A two-dimensional analytical model for the gate–source and gate–drain capacitances of ion-implanted short-channel GaAs metal-semiconductor-field effect transistor under dark and illuminated conditions

Tripathi

Jit

2011

Journal of Applied Physics

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Articles you may be interested inA two-dimensional model for the subthreshold swing of short-channel double-gate metal-oxide-semiconductor field effect transistors with a vertical Gaussian-like doping profile A two-dimensional model for the potential distribution and threshold voltage of short-channel double-gate metaloxide-semiconductor field-effect transistors with a vertical Gaussian-like doping profile

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confidence: 99%

A two-dimensional analytical model for the gate–source and gate–drain capacitances of ion-implanted short-channel GaAs metal-semiconductor-field effect transistor under dark and illuminated conditions

Tripathi

Jit

2011

Journal of Applied Physics

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“…In this case, based on simulations digital [12], we chose the value: s E "Field of saturation" is the value of the longitudinal electric field when the electrons reach their maximum speed. sat V : Is the minimum voltage drain-source required for the onset of saturation velocity given by [13].…”

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Modelisation and Simulation of Cgs.op and Cgd.op Capacities of GaAs MESFETs OPFET

Hamma¹,

Farh

Ziar

et al. 2019

SSP

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An analytical of new theoretical model has been developed to study the Capacitance characteristics for an optically controlled Gallium Arsenic Metal Semiconductor Field Effect Transistor MESFET (OPFET) doped uniformly. The model takes the effects of photoconductive and photovoltaic into account that determine the device characteristics in the illuminated condition. It has been presented here for an analysis of extrinsic and intrinsic parameters such as, gate capacitances including both of the gate-source capacitances gate-drain capacitances under dark and illumination condition. The numerical results have also been compared with the reported data experience in the literature and a good agreement is observed.

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“…These efforts fall in two main categories: analytical and equivalent circuit models. A recent review of these GaAs models can be found in Alsunaidi (2000) and Murty and Jit (2006). Although they provide representations of the device global operating conditions, analytical models are very well known for their simplifying assumptions.…”

Section: Introductionmentioning

confidence: 99%

Optoelectronic conversion of short pulses in sub-micrometer GaAs active devices

Alsunaidi

2008

Opt Quant Electron

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The accelerating integration of microwave and optical components in modern optoelectronic systems stimulates comprehensive investigations of device operation and efficiency. This paper studies the optoelectronic conversion capabilities of sub-micron GaAs active devices in response to ultra-short illumination pulses. The physical phenomena involved in the photo-electronic effects are appropriately accounted for using a physical device model based on the solution of the Boltzmann's transport equations. The study targets important optical performance indicators including terminal photocurrent peak value and switching time. A figure-of-merit is defined to quantify the overall response. Results show that operating and geometrical conditions can play important roles in the device design, operation and optimization process.

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A new analytical model for photo-dependent capacitances of GaAs MESFET’s with emphasis on the substrate related effects

Cited by 8 publications

References 29 publications

A two-dimensional analytical model for the gate–source and gate–drain capacitances of ion-implanted short-channel GaAs metal-semiconductor-field effect transistor under dark and illuminated conditions

A two-dimensional analytical model for the gate–source and gate–drain capacitances of ion-implanted short-channel GaAs metal-semiconductor-field effect transistor under dark and illuminated conditions

Modelisation and Simulation of Cgs.op and Cgd.op Capacities of GaAs MESFETs OPFET

Optoelectronic conversion of short pulses in sub-micrometer GaAs active devices

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