A New Analytical Pinned Photodiode Capacitance Model

Alaibakhsh, Hamzeh; Karami, Mohammad Azim

doi:10.1109/led.2018.2789980

Cited by 9 publications

(3 citation statements)

References 11 publications

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“…where ε is the silicon permittivity, ND is the donor atoms concentration at the inner region and VM is the maximum inner region PD potential in a completely depleted condition. The relationship between the electron population and PD potential in the junction region is [8]:…”

Section: B Modeling Of Exposure Processmentioning

confidence: 99%

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Analytical Modeling of Exposure Process in Pinned Photodiode CMOS Image Sensors

Gao

Gong

Gao

et al. 2020

IEEE J. Electron Devices Soc.

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The output features of pixels in CMOS image sensors (CISs) are influenced by different exposure conditions. This paper presents an analytical model to describe the output characteristics of the exposure process in pinned photodiode (PPD) CMOS image sensors with the accumulation of three charge sources: photogenerated charge, p-n junction-generated charge, and emission charge. In the proposed model, the difference between the time-based and light intensity-based photo response process is illustrated. The model also reveals the relationship between photodiode potential and light intensity at different exposure values. At the low exposure values, the PD potential increases with light intensity, and a contrary trend is observed at the high exposure values. This concludes that a larger linear output range can be obtained in high light intensity conditions. Furthermore, the improved model provides development analysis in terms of light intensity influence for long exposure time noise. The models were verified with technology computer-aided design simulation and the test devices were fabricated using a 0.18-μm CIS process. The model demonstrates good consistency with simulation and measured results.

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Section: B Modeling Of Exposure Processmentioning

confidence: 99%

“…This model analyzed the influence of doping concentration and implant energy of the donor and acceptor of PD. Furthermore, dynamic capacitance models during the charge accumulated phase were discussed in [7,8], and a method to extract the PD capacitance by the FWC characteristic curve is proposed in [9].…”

Section: Introductionmentioning

confidence: 99%

Analytical Modeling of Exposure Process in Pinned Photodiode CMOS Image Sensors

Gao

Gong

Gao

et al. 2020

IEEE J. Electron Devices Soc.

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“…The ratio of the accumulated charges and the voltage variation corresponds to the capacitance C PPD = (q N e )/V PPD . On the other hand, a detailed analytical model has been proposed in [19], the well-known expression of the junction capacitance [20] has been used in [2] and [21] to obtained an analytical expression of C PPD . Therefore, C PPD can be expressed as…”

Section: B Ppd Capacitancementioning

confidence: 99%

Compact Modeling of Charge Transfer in Pinned Photodiodes for CMOS Image Sensors

Capoccia

Boukhayma

Jazaeri

et al. 2019

IEEE Trans. Electron Devices

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In this paper, we propose a physics-based compact model of the pinned photodiode (PPD) combined with the transfer gate. A set of analytical expressions is derived for the 2-D electrostatic profile, the PPD capacitance, and the charge transfer current. The proposed model relies on the thermionic emission current mechanism, the barrier modulation, and the full-depletion approximation to obtain the charge transfer current. The proposed physics-based model is fully validated with technology computer-aided design simulations, i.e., stationary and optoelectrical simulations. The development of such a compact model for PPD represents an essential step toward the design, simulation, and optimization of PPD-based pixels in CMOS image sensors. Index Terms-Charge transfer, CMOS image sensors (CISs), compact modeling, pinned photodiode (PPD).

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Analytical Modeling of Charge Behavior in Pinned Photodiode for CMOS Image Sensors

Zhang

Xin

et al. 2023

IEEE Sensors J.

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A New Analytical Pinned Photodiode Capacitance Model

Cited by 9 publications

References 11 publications

Analytical Modeling of Exposure Process in Pinned Photodiode CMOS Image Sensors

Analytical Modeling of Exposure Process in Pinned Photodiode CMOS Image Sensors

Compact Modeling of Charge Transfer in Pinned Photodiodes for CMOS Image Sensors

Analytical Modeling of Charge Behavior in Pinned Photodiode for CMOS Image Sensors

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