A New Design Approach of Dopingless Tunnel FET for Enhancement of Device Characteristics

Raad, Bhagwan Ram; Tirkey, Sukeshni; Sharma, Dheeraj; Kondekar, P. N.

doi:10.1109/ted.2017.2672640

Cited by 121 publications

(55 citation statements)

References 20 publications

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“…This is due to the characteristics of DF-TFET by using electrostatically doping. Compared to other dopingless TFETs [22,23,36,37], DF-TFET has obvious advantages on I ON . This is because of the improved tunneling rate by using line tunneling junction and SiGe material.…”

Section: Characteristics With Different Parameters and Analog/ Rf mentioning

confidence: 99%

A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance

et al. 2020

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In this paper, a dopingless fin-shaped SiGe channel TFET (DF-TFET) is proposed and studied. To form a high-efficiency dopingless line tunneling junction, a fin-shaped SiGe channel and a gate/source overlap are induced. Through these methods, the DF-TFET with high on-state current, switching ratio of 12 orders of magnitude and no obvious ambipolar effect can be obtained. High κ material stack gate dielectric is induced to improve the off-state leakage, interface characteristics and the reliability of DF-TFET. Moreover, by using the dopingless channel and fin structure, the difficulties of doping process and asymmetric gate overlap formation can be resolved. As a result, the structure of DF-TFET can possess good manufacture applicability and remarkably reduce footprint. The physical mechanism of device and the effect of parameters on performance are studied in this work. Finally, on-state current (ION) of 58.8 μA/μm, minimum subthreshold swing of 2.8 mV/dec (SSmin), average subthreshold swing (SSavg) of 18.2 mV/dec can be obtained. With improved capacitance characteristics, cutoff frequency of 5.04 GHz and gain bandwidth product of 1.29 GHz can be obtained. With improved performance and robustness, DF-TFET can be a very attractive candidate for ultra-low-power applications.

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Section: Characteristics With Different Parameters and Analog/ Rf mentioning

confidence: 99%

A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance

et al. 2020

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“…We have calibrated the simulation model using [48]. The same tunneling model has been used in [9], [10], [15], [17], [46], [49]. Further, it is important to mention that the purpose of this work is to demonstrate how DGTFETs can be modified and employed in logic function realizations, rather than examining the exact current and voltage values.…”

Section: B Simulation Modelmentioning

confidence: 99%

“…Therefore, a lower L gap is preferable in the proposed device. We have chosen L gap = 5 nm in this work, similar to other published works [16], [17]. Moreover, considering future applications, it is important to analyze the scalability of the proposed XOR implementations.…”

Section: Realizing Xor Function Using Tfet-xor Structurementioning

confidence: 99%

Realizing XOR and XNOR Functions Using Tunnel Field-Effect Transistors

Garg

Saurabh

2020

IEEE J. Electron Devices Soc.

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Recently, a few compact logic function realizations such as AND, OR, NAND and NOR have been proposed using double-gate tunnel field-effect transistor (DGTFET) with independent gate-control. In this paper, using two-dimensional device simulations, we propose to realize the exclusive-OR (XOR) and exclusive-NOR (XNOR) logic functions. To implement an XOR function, a dual-material DGTFET (DM-DGTFET) is used. The structure is designed such that the band-to-band tunneling (BTBT) occurs at the boundary of these dual-material gates, rather than at the source-channel junction. Further, to realize the XNOR function, the gate-source and the gate-drain overlaps are used. The proposed DGTFET-based logic function implementations are able to modulate the current flow as per the required functionality, achieving an ON-state current by OFFstate current (ION /IOF F) ratio of order ∼ 10 9. Furthermore, it is demonstrated that a CMOS-type XNOR gate can be realized by combining the proposed XNOR and XOR functions in the pull-up and pull-down network, respectively.

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“…Wang at al. [136] The position deviation in the buried layer did not affect the device performance significantly. [135] The left gate segment was used to bend the band structure at the source-channel interface.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

Recent Advances in Low‐Dimensional Heterojunction‐Based Tunnel Field Effect Transistors

Qin

Wang

et al. 2018

Adv Elect Materials

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Since the continuous scaling down of the transistor channel length, extraordinary improvement is achieved in the switching speed. However, the rising leakage current degrades the power consumption seriously. In this regard, reducing supply voltage might be the most effective method. This requirement can be fulfilled well by tunnel field‐effect transistors (TFETs), because carriers transport via a band‐to‐band tunneling manner in the TFETs. Relying on the special transport mechanism, the TFETs often require band structure modulations and steep interfaces without trap state, which are challenging for bulk materials. Therefore, these challenges have boosted TFET designs based on low‐dimensional materials ranging from Si/Ge nanowires to state‐of‐art van der Waals heterostructures. Here, the key concepts of the currently developed TFETs are studied from the aspects of structure, material, transportation characteristic, and mechanism. According to the heterojunction bonding types, they can be divided into lateral and vertical TFETs in general. Furthermore, other related transistors based on tunneling are also included. Emerging problems and promotion methods toward these TFETs are introduced with the assistance of simulations. The main goal is to introduce the frontiers of TFET explorations and provide readers with a perspective on how to realize TFET applications in the future.

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A New Design Approach of Dopingless Tunnel FET for Enhancement of Device Characteristics

Cited by 121 publications

References 20 publications

A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance

A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance

Realizing XOR and XNOR Functions Using Tunnel Field-Effect Transistors

Recent Advances in Low‐Dimensional Heterojunction‐Based Tunnel Field Effect Transistors

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