A new drain-current injection technique for the measurement of off-state breakdown voltage in FETs

Abstract

Presence of deep-level states may have serious effects in the performance of devices based on diamond. For example, in the case of p-n junction devices, the reverse leakage current, the switching speed, and on-state conduction characteristics are dependent on the lifetimes of the carriers, which in turn are controlled by the position, density, and capture cross sections of the traps. Also, deeplevel impurities lead to compensation effects, resulting in changes in the background resistivity. Changes in resistivity affect the breakdown voltage and current conduction in power Schottky rectifiers and p-n junction devices. IV. CONCLUSIONS Current-voltage characteristics of P-doped polycrystalline Si, Au, and Pt contacts on natural diamond crystals have been investigated. These contacts show excellent rectification with low reverse leakage current densities. Although the I-V and C-V characteristics indicate the presence of a barrier, the I-V characteristics are apparently dominated by bulk effects rather than by thermionic emission over the barrier. Logarithmic plots of the I-V characteristics in the forward direction indicate space-charge-limited current conduction through the active volume of the devices. The natural diamond crystals investigated show the presence of deep levels in the energy range 0.5-0.8 eV above the valence band.

Determining dominant breakdown mechanisms in InP HEMTs

“…1 shows. Here we have measured breakdown mA/mm as a function of temperature using the drain current injection technique [8]. As has been previously observed in other devices [3], BV consistently decreases with increasing temperature.…”

Field Plate Devices for RF Power Applications

“…By monitoring the drain voltage it has been possible to obtain the experimental data depicted in figure 3, which qualitatively corresponds to the data that can typically be obtained on real devices (Bahl et al, 1993). As described in (Bahl et al, 1993) the drain-source breakdown voltage is given by the highest value reached from the V DS characteristic during the gate voltage sweep.…”

“…After describing the simulation procedure used for extracting I MAX and V KNEE parameters lets move now to the simulation used in order to extract the device breakdown voltage. Experimentally the device breakdown voltage can be measured by adopting the method proposed by (Bahl et al, 1993). For the device studied in this chapter the experimental measurement was emulated by means of numerical simulations.…”

Hydrogen-induced changes in the breakdown voltage of InP HEMTs

“…A detailed room-temperature characterization was performed pre-anneal and post-anneal. To monitor degradation in the extrinsic portion of the device, was measured using the drain-current-injection technique [8]. The breakdown voltage was defined at mA/mm.…”