A new IGBT behavioral model

Oh, Hyeong-Seok; Nokali, M. El

doi:10.1016/s0038-1101(01)00149-6

Cited by 31 publications

(12 citation statements)

References 4 publications

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“…C ge is the gate emitter capacitance, and I g is the gate current. I n2 , I disp and I cg are used in (7) and (8) to establish the boundary condition for ADE. To calculate these currents, the MOS voltage…”

Section: Mos-side Modelingmentioning

confidence: 99%

Physics‐based model of LPT CSTBT including MOS‐side two‐dimensional effects

Xue

2016

IET Power Electronics

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In this study, a physics-based model for light punch through (LPT) carrier stored trench bipolar transistor (CSTBT) is developed. The model is based on the Fourier series solution of ambipolar diffusion equation implemented in MATLAB and Simulink. In the model, the MOS-side two-dimensional (2D) effects resulting from trench gate and carrier storage layer are studied analytically. Assuming high-level injection in LPT buffer layer, the model also describes the carrier transport, redistribution and recombination in the buffer layer in details. The static and transient experiments for a commercial CSTBT are used to validate the presented model. The simulation results are compared with experiment results and good agreement is obtained.

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Section: Mos-side Modelingmentioning

confidence: 99%

Physics‐based model of LPT CSTBT including MOS‐side two‐dimensional effects

Xue

2016

IET Power Electronics

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“…It provides us with information that can be used for the analysis of the device long-term reliability, maximum ratings characterization, package design optimization, correct choice of heatsink [9]. So through self-heating effect, there is a connection between the electrical and thermal performances of the semiconductor device as shown in Figure 1 [10]. The voltage across the device U CE and the current through the device I E will determine the power dissipated.…”

Section: Self-heating In Igbt Transistormentioning

confidence: 99%

Modeling of the New Transient Behavioral Spice Model of IGBTs Including Temperature Effect

Lotfi¹,

Dibi²

2016

IJHIT

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This paper presents an Analog behavioral model (ABM) of the Insulated Gate Bipolar Transistor (IGBT) with Orcad Pspice 16.5. The Spice model was built using device parameters extracted through experiment. A full study of switching behavior of IGBT during turn-off and turn-on for inductive load with freewheeling diode is presented and simulated. All simulation results presented in this paper are validated, compared and showed good agreement with the measured data. The temperature dependent behavior is simulated and analyzed.

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“…In literature, the IGBT model has been represented by a couple of a simplified equivalent circuit. The first presents the IGBT as a N-channel MOSFET driving a PNP bipolar transistor in a Darlington configuration [4]- [8] , whereas the second consists of an N channel MOSFET in series with a diode [9]. The proposed models cannot describe the IGBT behaviour accurately, because the wide base in the IGBT differs from the existing discrete power BJT model.…”

Section: Introductionmentioning

confidence: 99%

A SPICE IGBT Model with easy parameters extraction

Hadini

Galadi

Echchelh

2019

Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 20

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An accurate IGBT model is presented in this paper. It is based on the IGBT physical structure. The model uses an equivalent circuit which combines a MOSFET, controlled by a voltage-controlled voltage source, in series with a diode. the required parameters can be extracted with a simple procedure from the datasheet dc characteristics given by the manufacturers. The results of the comparison between the simulation and the datasheet information shows an average error less than 9% for the output characteristics and less than 7% for the transfer characteristic. Moreover, the model is simple and can be implemented in any SPICE-based circuit simulator. A description of the model and the parameter extraction procedure will be provided along.

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A new IGBT behavioral model

Cited by 31 publications

References 4 publications

Physics‐based model of LPT CSTBT including MOS‐side two‐dimensional effects

Physics‐based model of LPT CSTBT including MOS‐side two‐dimensional effects

Modeling of the New Transient Behavioral Spice Model of IGBTs Including Temperature Effect

A SPICE IGBT Model with easy parameters extraction

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