A review of interconnect materials used in emerging memory device packaging: first- and second-level interconnect materials

Zou, Y. S.; Gan, Chong Leong; Chung, M. H.; Takiar, Hem

doi:10.1007/s10854-021-07105-9

Cited by 18 publications

(2 citation statements)

References 71 publications

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“…TSV usually transmits periodic power and ground signals. It has been widely used in 3D integrated circuits and 3D packaging [ 98 ], which has great application prospects in the development of SoC (System on Chip) and heterogeneous integration.…”

Section: Through-silicon-via (Tsv)mentioning

confidence: 99%

Recent Progress and Challenges Regarding Carbon Nanotube On-Chip Interconnects

Chen

Zhou

et al. 2022

Micromachines

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Along with deep scaling transistors and complex electronics information exchange networks, very-large-scale-integrated (VLSI) circuits require high performance and ultra-low power consumption. In order to meet the demand of data-abundant workloads and their energy efficiency, improving only the transistor performance would not be sufficient. Super high-speed microprocessors are useless if the capacity of the data lines is not increased accordingly. Meanwhile, traditional on-chip copper interconnects reach their physical limitation of resistivity and reliability and may no longer be able to keep pace with a processor’s data throughput. As one of the potential alternatives, carbon nanotubes (CNTs) have attracted important attention to become the future emerging on-chip interconnects with possible explorations of new development directions. In this paper, we focus on the electrical, thermal, and process compatibility issues of current on-chip interconnects. We review the advantages, recent developments, and dilemmas of CNT-based interconnects from the perspective of different interconnect lengths and through-silicon-via (TSV) applications.

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Section: Through-silicon-via (Tsv)mentioning

confidence: 99%

Recent Progress and Challenges Regarding Carbon Nanotube On-Chip Interconnects

Chen

Zhou

et al. 2022

Micromachines

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“…Despite the advantage of AI, it requires a significant amount of computational resources. A possible solution to these problems is three-dimensional integration that allows for improved use of devices, interconnects, and subsystems, such as memory and analogprocessing circuits, although it is increasingly difficult to control interconnect resistance [1]- [3]. A candidate for further technological innovation is to make interconnects intelligent, offering reduced energy loss and high-speed processing.…”

Section: Introductionmentioning

confidence: 99%

Temperature Driven Current–Voltage Characteristics of Ionic Liquid Type Intelligent Connection Device

Kobayashi¹,

Orii²,

Shima

et al. 2022

IEEE J. Electron Devices Soc.

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The temperature dependence of an intelligent connection (IConnect) device, in which an ionic liquid (IL) plays an essential role in a memristive function is presented in this study. An appropriate choice of IL and dissolved metal ion species can control the volatility of the IL-IConnect device. The temperature dependence of the IL-IConnect device was strong, although the change in current-voltage characteristics was reversible in response to temperature variations. The device's potential as a physical reservoir-computing device is studied.

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Wearout Reliability-Based Characterization in Memory Packaging

Leong¹,

Chen-Yu²

2023

Springer Series in Reliability Engineering

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A review of interconnect materials used in emerging memory device packaging: first- and second-level interconnect materials

Cited by 18 publications

References 71 publications

Recent Progress and Challenges Regarding Carbon Nanotube On-Chip Interconnects

Recent Progress and Challenges Regarding Carbon Nanotube On-Chip Interconnects

Temperature Driven Current–Voltage Characteristics of Ionic Liquid Type Intelligent Connection Device

Wearout Reliability-Based Characterization in Memory Packaging

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