A semi-theoretical relationship between the breakdown voltage of field plate edge and field plate design in planar P–N junction terminated with finite field plate

He, Jin; Zhang, Xing

doi:10.1016/s0026-2692(01)00053-2

Cited by 4 publications

(3 citation statements)

References 8 publications

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“…In order to support the present analysis performed for the multiguard ring and metal-overhang structures, the simulator has been calibrated against the analytical and experimental data [29][30][31]. The results are given in tables 5-7 along with the device parameters used in the simulation.…”

Section: Validation With Analytical Resultsmentioning

confidence: 99%

“…Thus, the present analysis provides almost a complete insight for designing multi-guard ring Si sensors. Values of the different parameters in numerical models used in the simulation have been obtained by comparing simulation results with analytical and experimental data [29][30][31]. The present study is performed as a part of the R&D work for the development of Si sensors for the proposed SiD detector [32].…”

Section: Introductionmentioning

confidence: 99%

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Development of multi-guard ring-equipped p⁺–n Si microstrip sensors for the SiD detector at the ILC

Saxena¹,

Ranjan²,

Bhardwaj³

et al. 2010

Semicond. Sci. Technol.

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Si sensors in future high-energy physics experiments will encounter an extremely harsh radiation environment. In lepton colliders, the dominant background from electron-positron pairs can be managed with modern Si technology, but there is also a potentially dangerous neutron background. Specifically, the estimated neutron background is around 1-1.6 × 10 10 1-MeV equivalent neutrons cm −2 year −1 for the Si microstrip sensors to be used in the innermost vertex detectors of the International Linear Collider (ILC). This causes bulk damage in the Si sensors due to the non-ionization energy loss and is of much greater importance in determining the viability of their long-term operation. For reliable operation, such sensors will need to operate at high reverse biases, far beyond the full depletion voltages, which can lead to the sensor breakdown. Multi-guard ring structures have evolved as a powerful technique to improve the breakdown performance of these sensors. In this work, a comprehensive approach towards the understanding of multi-guard ring structures is followed by simulating several structures with different layouts. The potential and field distributions help in optimizing design parameters.

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Section: Validation With Analytical Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Development of multi-guard ring-equipped p⁺–n Si microstrip sensors for the SiD detector at the ILC

Saxena¹,

Ranjan²,

Bhardwaj³

et al. 2010

Semicond. Sci. Technol.

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“…Figures 4(a If further looking at the extracted electric field in Fig. 4(c), we can find that the block film with negative charges plays a role like a field plate with reverse bias [12] . The electric field at 034003-2 the channel edge (E ce ) is released because the negative charges help deplete the drift region; meanwhile the field at the edge of block film (E fe ) is higher bearing some similarity to the effect that would occur at the radius of a planar junction.…”

Section: Film Properties and Electric Field Beneathmentioning

confidence: 94%

Silicide-block-film effects on high voltage drain-extended MOS transistors

Wang¹,

Gao²,

Liu³

et al. 2009

J. Semicond.

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Silicide-block-film effects on drain-extended MOS (DEMOS) transistors were comparatively investigated, by means of different film stack stoichiometric SiO2 and silicon-rich oxide (SRO). The electrical properties of the as-deposited films were evaluated by extracting source/drain series resistance. It was found that the block film plays a role like a field plate, which has significant influence on the electric field beneath. Similar to hot-carrier-injection (HCI) induced degradation for devices, the block film initially charged in fabrication process also strongly affects the device characteristics and limits the safe operating area.

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LDMOS in SOI technology with very-thin silicon film

Bawedin

Renaux

Flandre

2004

Solid-State Electronics

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A semi-theoretical relationship between the breakdown voltage of field plate edge and field plate design in planar P–N junction terminated with finite field plate

Cited by 4 publications

References 8 publications

Development of multi-guard ring-equipped p⁺–n Si microstrip sensors for the SiD detector at the ILC

Development of multi-guard ring-equipped p⁺–n Si microstrip sensors for the SiD detector at the ILC

Silicide-block-film effects on high voltage drain-extended MOS transistors

LDMOS in SOI technology with very-thin silicon film

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A semi-theoretical relationship between the breakdown voltage of field plate edge and field plate design in planar P–N junction terminated with finite field plate

Cited by 4 publications

References 8 publications

Development of multi-guard ring-equipped p+–n Si microstrip sensors for the SiD detector at the ILC

Development of multi-guard ring-equipped p+–n Si microstrip sensors for the SiD detector at the ILC

Silicide-block-film effects on high voltage drain-extended MOS transistors

LDMOS in SOI technology with very-thin silicon film

Contact Info

Product

Resources

About

Development of multi-guard ring-equipped p⁺–n Si microstrip sensors for the SiD detector at the ILC

Development of multi-guard ring-equipped p⁺–n Si microstrip sensors for the SiD detector at the ILC