A surface and interface study on the InSb/GaAs heterostructures

Li, K.; Wee, Aileen; Lin, Jianyi; Lee, K.K.; Watt, F.; Tan, K.L.; Feng, Zhi Gang; Webb, J. B.

doi:10.1016/s0040-6090(96)09565-x

Cited by 4 publications

(4 citation statements)

References 16 publications

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“…3 shows typical 750 and 200 Sb 3d 312 XPS narrow scan spectra. For simplicity, the Sb 3d, 12 peak is not shown here, as it overlaps with the 0 ls peak. Peak fitting is conducted using pure Gaussian line shape.…”

Section: Surface Chemical Statesmentioning

confidence: 99%

See 1 more Smart Citation

Surface and Interface Properties of InSb Epitaxial Thin Films Grown on Gaas by Low Pressure Metalorganic Chemical Vapor Deposition

Tan

Pelczynski³

et al. 1997

MRS Proc.

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There is increasing interest in the epitaxial growth of high quality InSb thin films on GaAs substrates for many device applications such as infrared optoelectronics. The large lattice mismatch (14.6%) between InSb and GaAs has meant that both growth techniques and conditions have a large influence on the interface properties and consequently the film quality. A surface science study, by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) together with Nomarski microscopy, on the surface and interface properties of InSb/GaAs by metalorganic chemical vapor deposition is presented. It is found fromthe XPS data that the ambient surface is composed of InSb, In 2 0 3 , Sb 2 0 3 and Sb 2 0 5 . The interdiffusion phenomena are studied by AES depth profiling; the width of interdiffusion region is determined to be 50±10 nm for all the samples grown at different V/III ratios. This is narrower than the data previously obtained for InSb/GaAs interfaces produced by metalorganic magnetron sputtering. The results also demonstrate that uniform and stoichiometric InSb films have been obtained, and that the reproducibility of the MOCVD technique is excellent.

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Section: Surface Chemical Statesmentioning

confidence: 99%

“…The epitaxial growth of InSb on GaAs has been achieved through several techniques such as molecular beam epitaxy (MBE) [2][3][4]6,10], metalorganic chemical vapor deposition (MOCVD) [7,11], and metalorganic/r.f. magnetron sputtering [8,12]. To commercially fabricate InSb-based devices, large-scale production is essential.…”

Section: Introductionmentioning

confidence: 99%

Surface and Interface Properties of InSb Epitaxial Thin Films Grown on Gaas by Low Pressure Metalorganic Chemical Vapor Deposition

Tan

Pelczynski³

et al. 1997

MRS Proc.

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“…While CdTe is the only semiinsulating lattice-matched substrate available for InSb growth, it is difficult, however, to avoid the formation of the In 2 Te 3 precipitates at the InSb/CdTe interface [43,44]. Hence, many alternative materials (viz., Si, GaAs, InP, sapphire, and mica) have been chosen as substrates for preparing InSb epifilms [2,[15][16][17][19][20][21][22][23][24][25][26][27][28][29][30][31][32] by molecular beam epitaxy, liquid-phase epitaxy [18,30], metalorganic chemical vapor deposition (MOCVD) [20][21][22]31], metalorganic magnetron sputtering [32,45], and two-step growth process [46] methods. Despite a large (14.6%) lattice mismatch between InSb and GaAs, the semi-insulating GaAs is considered as an attractive substrate due to high chemical stability and resistivity.…”

Section: Introductionmentioning

confidence: 99%

“…Despite a large (14.6%) lattice mismatch between InSb and GaAs, the semi-insulating GaAs is considered as an attractive substrate due to high chemical stability and resistivity. Efforts have been made to grow InSb thin films on four-inch GaAs substrates [31,32,47]. Also many attempts made by MOCVD have shown improvements in InSb film growth on large area semi-insulating GaAs substrates [47][48][49].…”

Section: Introductionmentioning

confidence: 99%

Synchrotron Radiation X‐Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition

Qian

Liang

Luo

et al. 2018

Advances in Materials Science and Engineering

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A series of ultrathin InSb films grown on GaAs by low-pressure metalorganic chemical vapor deposition with different V/III ratios were investigated thoroughly using spectroscopic ellipsometry (SE), X-ray diffraction, and synchrotron radiation X-ray absorption spectroscopy. The results predicted that InSb films on GaAs grown under too high or too low V/III ratios are with poor quality, while those grown with proper V/III ratios of 4.20–4.78 possess the high crystalline quality. The temperature-dependent SE (20–300°C) and simulation showed smooth variations of SE spectra, optical constants (n, k, e1, and ε2), and critical energy points (E1, E1+Δ1, E′0, E2, and E′1) for InSb film when temperature increased from 20°C to 250°C, while at 300°C, large changes appeared. Our study revealed the oxidation of about two atomic layers and the formation of an indium-oxide (InO) layer of ∼5.4 nm. This indicates the high temperature limitation for the use of InSb/GaAs materials, up to 250°C.

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Investigation of the Optical Properties of InSb Thin Films Grown on GaAs by Temperature-Dependent Spectroscopic Ellipsometry

et al. 2019

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A surface and interface study on the InSb/GaAs heterostructures

Cited by 4 publications

References 16 publications

Surface and Interface Properties of InSb Epitaxial Thin Films Grown on Gaas by Low Pressure Metalorganic Chemical Vapor Deposition

Surface and Interface Properties of InSb Epitaxial Thin Films Grown on Gaas by Low Pressure Metalorganic Chemical Vapor Deposition

Synchrotron Radiation X‐Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition

Investigation of the Optical Properties of InSb Thin Films Grown on GaAs by Temperature-Dependent Spectroscopic Ellipsometry

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