Alteration of oxide-trap switching activity at operating condition by voltage-accelerated stressing

Tung, Z. Y.; Ang, Diing Shenp

doi:10.1109/irps.2016.7574643

Cited by 2 publications

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“…The general understanding is that c and e are functions of applied biases and temperature only and are invariant under a given operating condition. Interestingly, it has been found in some studies [88], [95], [126], [127] that accelerated gate stressing, typical during BTI testing, could change the capture/emission characteristics of some switching traps, showing a volatile nature not only in terms of charge occupancy, but also in terms of the atomic structure of the underlying defects. These effects may impact models or applications that presume trap properties are stress invariant.…”

Section: ) Samplementioning

confidence: 99%

“…To date, much understanding on the characteristics of discrete switching oxide traps (SOTs) that in a small-area MOSFET has been obtained from the perspective of BTI or gate stressing (Vg) studies [86], [88], [93], [126], [127]. On the other hand, comparable to BTI effect, the hot carrier injection (HCI) degradation is also a serious concern [129], [164].…”

Section: Chapter Summarymentioning

confidence: 99%

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Oxide-defects driven study on reliability and synaptic response characterization of logic devices

Ju¹

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for their technical conversations and knowledge sharing. In particular, I would also like to thank Dr. Lin Ye for being very supportive in many aspects during my doctoral study. Senior Sing Yew, appreciate your patience in helping to proofread the thesis. Your feedback is particularly helpful! Greatest gratitude to their assistance, I can carry out experimental research so smoothly and thoroughly.I would like to owe a vote of thanks to the well-experienced technicians in NTU Semiconductor Characterization Lab, Mr. Seow Yong Hing, Ms. Seet Lye Ping, and Mr. Ng Yong Chiang, for their technical and maintenance support in the prober stations. I also extend my gratefulness and cherish the friendship from Zhiyi, Xinhua, Yuxi, Brain Jia Xu, Fang Qiang, Yuanbo, and all my friends in NTU for their help and lovely companions.In addition, I would like to extend my gratitude to the thesis advisory committee members -Prof. Kim Tae Hyoung and Prof. Tang Xiaohong, for their constructive reviews, sharp proposals, and timely suggestions which have helped me to be more focused on the project direction and enriched my research insight. I am grateful to the Ministry of Education Singapore and Nanyang Technological University for a 4-year generous co-funding research scholarship.Last but not least, I would like to dedicate this dissertation to my familyparticularly my dearest parents Ju Zhoufeng and Liu Yaling. They have always been by my side whenever I need it. Their everlasting love and unconditional care have been constant supports for me to keep moving forward in my life and, I am forever thankful.

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confidence: 99%

Section: Chapter Summarymentioning

confidence: 99%

Oxide-defects driven study on reliability and synaptic response characterization of logic devices

Ju¹

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Response of Switching Hole Traps in the Small-Area P-MOSFET Under Channel Hot-Hole Effect

Ang

2019

2019 IEEE International Reliability Physics Symposium (IRPS)

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Alteration of oxide-trap switching activity at operating condition by voltage-accelerated stressing

Cited by 2 publications

References 12 publications

Oxide-defects driven study on reliability and synaptic response characterization of logic devices

Oxide-defects driven study on reliability and synaptic response characterization of logic devices

Response of Switching Hole Traps in the Small-Area P-MOSFET Under Channel Hot-Hole Effect

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