An Analysis of Destructive Methods of Thin Films Thickness Measurement

Shupenev, A.E.; Pankova, Nina; Korshunov, I. S.; Grigoriyants, A.G.

doi:10.18698/0536-1044-2019-3-31-39

Cited by 3 publications

(1 citation statement)

References 8 publications

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“…where D1 is the diffusion coefficient at T=1323 K, D1=2•10 -13 сm 2 /s [6]; t1duration of predeposition. The depth of the heterojunction was also determined experimentally by the oblique section method [7]. The experimental and calculated graphs of the dependence of xn+-p on the duration of predeposition are shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

Influence of Surface Resistance of Silicon p-i-n Photodiodes n+-Layer on their Electrical Parameters

Kukurudziak

2022

Phys. Chem. Solid St.

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Silicon quadrant p-i-n photodiodes of different concentrations of diffused phosphorus in the n+- layer were fabricated. The experimental curve of phosphorus impurity distribution along the depth of the diffusion layer is obtained. The influence of charge carrier concentration in this layer on the dark currents of responsive elements and the guard ring was studied. Volt-ampere characteristics of photodiodes were measured. It was seen that when the surface resistance of the n+-layer decreases, the dark currents decrease, the samples with a surface resistance of 1,9 – 2,4 Ohm / □ have approximately the same level of dark currents of responsive areas, i.e. further increase in charge carrier concentration makes no change. As to dark currents of photodiode guard rings, it was found that for the most part they depend on the state of the crystal periphery but not on the level of doping. The influence of the surface resistance of the n+-layer on interconnection resistance between the responsive areas and the protective ring, and no influence on the capacitance of the photodiodes were revealed.

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Section: Methodsmentioning

confidence: 99%

Influence of Surface Resistance of Silicon p-i-n Photodiodes n+-Layer on their Electrical Parameters

Kukurudziak

2022

Phys. Chem. Solid St.

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High-responsivity silicon p–i–n mesa-photodiode

Kukurudziak

Майструк

2023

Semicond. Sci. Technol.

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Silicon p-i-n mesa-photodiodes have been made. Different variants of masking coating during etching of the mesa-profile have been studied. Comparative characteristic of photodetectors manufacture by planar- and mesa-technology have been carried out. Defect formation on the surface of silicon substrates in different options of technology was investigated. Parameters of photodiodes manufactured by planar and meso technology were investigated. Photodiodes with a meso structure have higher responsivity and lower capacitance than samples made by conventional planar technology.

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Analysis of the Spectral Characteristics of the Responsivity of Diffusion <i>p-i-n</i> Photodiode Based on High Resistivity <p>p</p>-Si

Kukurudziak¹

2023

Microsyst., Electron. & Acoust.

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This Taking into account the market need for highly responive silicon p-i-n photodiodes (PD) for detecting YAG-laser radiation (wavelength 1.064 μm), it was decided to investigate methods of increasing their responsivity, in particular, shifting the maximum of the spectral responsivity characteristic of the photodetector towards longer wavelengths, as well as to analyze the influence of various technological factors in its appearance. Research was conducted on silicon four-element p-i-n photodiodes with guard ring, manufactured by diffusion-planar and mesa technology. Single crystal p-type silicon with [111] orientation, resistivity of 13-21 kΩ and life time of minor charge carriers of 1.2-2 ms was used. It was found that when the reverse bias voltage increases, the maximum of the spectral characteristic shifts to longer wavelengths. This is caused by the expansion of the space charge region (SCR) with an increase in the bias voltage and, accordingly, an increase in the collection coefficient of charge carriers. When studying the spectral characteristic of samples with different resistivity, it was noticed that when the resistivity increases, the maximum of the spectral characteristic can be reached at a lower bias voltage. Because with a higher resistivity, the area of the SCR expands over the entire thickness of the substrate at a lower voltage. When expanding the space charge region to the maximum value, the responsivity level of the PD also reaches saturation. Accordingly, it makes no sense to use a bias voltage of the photodiode higher than the one at which the width of the SCR reaches the reverse side of the crystal. It is also seen that when the life time of minor charge carriers and silicon resistivity increases at the same bias voltage, the maximum of the spectral characteristic shifts to longer wavelengths. The maximum value of the spectral characteristic of 1.01-1.02 μm was reached. It was not possible to achieve a further shift, since the shape of the spectral characteristic of the sensitivity of photodetectors is primarily determined by the dependence of the collection coefficient of charge carrier on the wavelength, the maximum of which under normal conditions is at a wavelength of 0.8-0.9 μm. It is possible to achieve the maximum collection coefficient of charge carriers by optimizing the concentration of impurity in the p+- and n+- regions of the crystal, which allows minimizing the absorption of radiation in these regions. When using mesa technology, which minimizes the degradation of the resistivity of the material, no further shift of the maximum occurs, but the absolute value of responsivity increases compared to planar technology. For a wavelength of 1064 μm, a value of pulse responsivity of 0.5-0.53 A/W and 0.46-0.48 A/W was achieved for mesa- and planar PD, respectively (with a specific resistance of 20-21 kΩ), which is about 60% of the maximum value. It was also seen that a change in the depth of the PD diffusion layers can negatively affect the noise level. It was found that at a depth of n+-p-junction of 4.25 μm, the level of responsivity, at wavelengths below the maximum of the spectral characteristic, is the lowest, accordingly, the influence of background radiation noise on the level of the useful signal at this depth of p-n-junction is minimal.

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An Analysis of Destructive Methods of Thin Films Thickness Measurement

Cited by 3 publications

References 8 publications

Influence of Surface Resistance of Silicon p-i-n Photodiodes n+-Layer on their Electrical Parameters

Influence of Surface Resistance of Silicon p-i-n Photodiodes n+-Layer on their Electrical Parameters

High-responsivity silicon p–i–n mesa-photodiode

Analysis of the Spectral Characteristics of the Responsivity of Diffusion <i>p-i-n</i> Photodiode Based on High Resistivity <p>p</p>-Si

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